PBSS4140V T/R NXP Semiconductors, PBSS4140V T/R Datasheet

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PBSS4140V T/R

Manufacturer Part Number
PBSS4140V T/R
Description
Transistors Bipolar - BJT TRANS BISS TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS4140V T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
40 V
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
150 MHz
Dc Collector/base Gain Hfe Min
300 at 1 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SS-Mini
Continuous Collector Current
1 A
Maximum Power Dissipation
1200 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
PBSS4140V,115
Product data sheet
Supersedes data of 2001 Nov 05
DATA SHEET
PBSS4140V
40 V low V
DISCRETE SEMICONDUCTORS
CEsat
M3D744
NPN transistor
2002 Jun 20

Related parts for PBSS4140V T/R

PBSS4140V T/R Summary of contents

Page 1

DATA SHEET PBSS4140V 40 V low V Product data sheet Supersedes data of 2001 Nov 05 DISCRETE SEMICONDUCTORS M3D744 NPN transistor CEsat 2002 Jun 20 ...

Page 2

... NXP Semiconductors 40 V low V NPN transistor CEsat FEATURES • 300 mW total power dissipation • Very small 1 1 0.55 mm ultra thin package • Improved thermal behaviour due to flat leads • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High current capabilities • ...

Page 3

... NXP Semiconductors 40 V low V NPN transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I repetitive peak collector current CRP ...

Page 4

... NXP Semiconductors 40 V low V NPN transistor CEsat CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I collector-emitter cut-off current CEO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation voltage I CEsat R equivalent on-resistance CEsat V base-emitter saturation voltage ...

Page 5

... NXP Semiconductors 40 V low V NPN transistor CEsat 1000 handbook, halfpage h FE 800 600 400 200 0 −1 −10 −1 −10 − 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values. ...

Page 6

... NXP Semiconductors 40 V low V NPN transistor CEsat 400 handbook, halfpage f T (MHz) 300 200 100 0 0 200 400 600 Fig.6 Transition frequency as a function of collector current. 2002 Jun 20 MLD750 800 1000 I C (mA) 6 Product data sheet PBSS4140V ...

Page 7

... NXP Semiconductors 40 V low V NPN transistor CEsat PACKAGE OUTLINE Plastic surface mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 2002 Jun ...

Page 8

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 9

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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