PBSS4140V T/R NXP Semiconductors, PBSS4140V T/R Datasheet - Page 4

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PBSS4140V T/R

Manufacturer Part Number
PBSS4140V T/R
Description
Transistors Bipolar - BJT TRANS BISS TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS4140V T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
40 V
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
150 MHz
Dc Collector/base Gain Hfe Min
300 at 1 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SS-Mini
Continuous Collector Current
1 A
Maximum Power Dissipation
1200 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
PBSS4140V,115
NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2002 Jun 20
I
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
CEO
EBO
T
FE
CEsat
BEsat
BEon
40 V low V
CEsat
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
CEsat
PARAMETER
NPN transistor
V
V
V
V
V
V
V
V
I
I
I
I
I
V
I
f = 100 MHz
V
C
C
C
C
C
C
C
CB
CB
CE
EB
CE
CE
CE
CE
CE
CB
= 100 mA; I
= 500 mA; I
= 1 A; I
= 2 A; I
= 1 A; I
= 1 A; I
= 50 mA; V
= 5 V; I
= 40 V; I
= 40 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 10 V; I
4
B
B
B
B
CONDITIONS
= 100 mA; note 1
= 200 mA; note 1
= 100 mA; note 1
= 100 mA
C
C
C
C
C
C
E
E
B
E
= 0
= 1 mA
= 500 mA
= 1 A
= 2 A; note 1
= 1 A
CE
B
B
= 0
= 0; T
= 0
= I
= 1 mA
= 50 mA
= 10 V;
e
= 0; f = 1 MHz
amb
= 150 °C
300
300
200
75
150
MIN.
50
70
150
320
150
TYP.
PBSS4140V
Product data sheet
100
50
100
100
900
80
110
190
440
<190
1.2
1.1
10
MAX.
nA
μA
nA
nA
mV
mV
mV
mV
V
V
MHz
pF
UNIT

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