PBSS4140V T/R NXP Semiconductors, PBSS4140V T/R Datasheet - Page 5

• Manufacturer Part Number: PBSS4140V T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS4140V T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 150 MHz
• Dc Collector/base Gain Hfe Min: 300 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SS-Mini
• Continuous Collector Current: 1 A
• Maximum Power Dissipation: 1200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PBSS4140V,115

NXP Semiconductors
2002 Jun 20
handbook, halfpage
handbook, halfpage
40 V low V
V CEsat
V
(1) T
(2) T
(3) T
Fig.2
I
(1) T
(2) T
(3) T
Fig.4
C
(mV)
CE
/I
h FE
1000
B
800
600
400
200
10
10
= 5 V.
= 10.
10
−10
amb
amb
amb
amb
amb
amb
0
10
1
3
2
−1
−1
= 150 °C.
= 25 °C.
= −55 °C.
= 150 °C.
= 25 °C.
= −55 °C.
DC current gain as a function of collector
current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
−1
CEsat
1
(2)
−10
NPN transistor
10
(1)
(3)
−10
(1)
(2)
(3)
2
10
−10
2
I C (mA)
I C (mA)
3
MLD746
MLD748
−10
10
3
4
5
handbook, halfpage
handbook, halfpage
R CEsat
V
(1) T
(2) T
(3) T
Fig.3
I
(1) T
(2) T
(3) T
Fig.5
C
CE
(Ω)
/I
V BE
10
B
10
(V)
10
= 5 V.
= 10.
10
10
−1
−1
amb
amb
amb
amb
amb
amb
10
10
1
1
2
−1
−1
= −55 °C.
= 25 °C.
= 150 °C.
= 150 °C.
= 25 °C.
= −55 °C.
Base-emitter voltage as a function of
collector current; typical values.
Equivalent on-resistance as a function of
collector current; typical values.
1
1
10
10
(3)
(1)
10
(1)
(3)
(2)
2
PBSS4140V
10
Product data sheet
2
(2)
10
I C (mA)
3
I C (mA)
MLD749
MLD747
10
10
3
4