2N5551 T/R NXP Semiconductors, 2N5551 T/R Datasheet - Page 2

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2N5551 T/R

Manufacturer Part Number
2N5551 T/R
Description
Transistors Bipolar - BJT TRANS HV TAPE WIDE PITCH
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 2N5551 T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
180 V
Collector- Emitter Voltage Vceo Max
160 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
6 V
Gain Bandwidth Product Ft
300 MHz
Dc Collector/base Gain Hfe Min
80 at 1 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-54
Continuous Collector Current
0.3 A
Maximum Power Dissipation
630 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
2000
Part # Aliases
2N5551,116
Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN high-voltage transistor in a TO-92; SOT54 plastic
package. PNP complements: 2N5400 and 2N5401.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2004 Oct 28
2N5550
2N5551
V
V
V
I
I
I
P
T
T
T
C
CM
BM
TYPE NUMBER
SYMBOL
Low current (max. 300 mA)
High voltage (max. 160 V).
Switching and amplification in high voltage applications
such as telephony.
stg
j
amb
CBO
CEO
EBO
tot
NPN high-voltage transistors
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
2N5550
2N5551
2N5550
2N5551
SC-43A
NAME
PARAMETER
plastic single-ended leaded (through hole) package; 3 leads
open emitter
open base
open collector
T
amb
2
25 C
PINNING
CONDITIONS
handbook, halfpage
DESCRIPTION
PACKAGE
Fig.1
PIN
1
2
3
Simplified outline (TO-92; SOT54)
and symbol.
1
2
collector
base
emitter
3
65
65
MIN.
DESCRIPTION
2N5550; 2N5551
Product specification
160
180
140
160
6
300
600
100
630
+150
150
+150
MAM279
MAX.
2
VERSION
SOT54
V
V
V
V
V
mA
mA
mA
mW
C
C
C
UNIT
1
3

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