2N5551 T/R NXP Semiconductors, 2N5551 T/R Datasheet - Page 3

• Manufacturer Part Number: 2N5551 T/R
• Description: Transistors Bipolar - BJT TRANS HV TAPE WIDE PITCH
• Manufacturer: NXP Semiconductors

Specifications of 2N5551 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 180 V
• Collector- Emitter Voltage Vceo Max: 160 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 300 MHz
• Dc Collector/base Gain Hfe Min: 80 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Continuous Collector Current: 0.3 A
• Maximum Power Dissipation: 630 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 2000
• Part # Aliases: 2N5551,116

Philips Semiconductors
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
2004 Oct 28
R
I
I
h
V
V
C
C
f
F
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
NPN high-voltage transistors
th(j-a)
c
e
= 25 C unless otherwise specified.
thermal resistance from junction to ambient
collector-base cut-off current
collector-base cut-off current
emitter-base cut-off current
DC current gain
DC current gain
DC current gain
collector-emitter saturation voltage
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
PARAMETER
PARAMETER
V
V
V
V
V
V
V
V
I
I
I
I
V
V
V
V
f = 10 Hz to 15.7 kHz
C
C
C
C
CB
CB
CB
CB
EB
CE
CE
CE
CB
EB
CE
CE
= 10 mA; I
= 50 mA; I
= 10 mA; I
= 50 mA; I
= 4 V; I
= 0.5 V; I
= 100 V; I
= 100 V; I
= 120 V; I
= 120 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 10 V; I
= 10 V; I
= 5 V; I
3
CONDITIONS
C
C
C
C
C
B
B
B
B
E
C
= 0 A
= 1 mA; see Fig.2
= 10 mA; see Fig.2
= 50 mA; see Fig.2
C
= 200 A; R
E
E
E
E
= 1 mA
= 5 mA
= 1 mA
= 5 mA
= i
= 10 mA; f = 100 MHz 100
= i
= 0 A
= 0 A; T
= 0 A
= 0 A; T
e
c
= 0 A; f = 1 MHz
= 0 A; f = 1 MHz
j
j
= 100 C
= 100 C
S
= 2 k ;
2N5550; 2N5551
60
80
60
80
20
30
MIN.
VALUE
200
Product specification
100
100
50
50
50
250
250
150
150
250
200
1
1
6
30
300
10
8
MAX.
UNIT
K/W
nA
nA
nA
mV
mV
mV
mV
V
V
pF
pF
MHz
dB
dB
UNIT
A
A