MT45W4MW16BCGB-701 IT Micron Technology Inc, MT45W4MW16BCGB-701 IT Datasheet - Page 34

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MT45W4MW16BCGB-701 IT

Manufacturer Part Number
MT45W4MW16BCGB-701 IT
Description
IC PSRAM 64MB 54-VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT45W4MW16BCGB-701 IT

Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
64M (4M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Operating Temperature (max)
85C
Operating Temperature (min)
-40C
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q3816748
Electrical Characteristics
Table 10:
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__2.fm - Rev. F 9/07 EN
Parameter
Voltage to any ball except V
Voltage on V
Voltage on V
Storage temperature (plastic)
Operating temperature (case)
Soldering temperature and time
Wireless
Industrial
10s (solder ball only)
CC
CC
Absolute Maximum Ratings
Q supply relative to V
supply relative to V
Notes:
1. This exceeds the CellularRAM Workgroup 1.5 specification of –0.3V to V
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
CC
; V
CC
Q supply relative to V
SS
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
SS
SS
34
–0.5V to (4.0V or V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
–55°C to +150°C
–0.2V to +2.45V
–30°C to +85°C
–40°C to +85°C
–0.2V to +4.0V
CC
Electrical Characteristics
Rating
+260°C
Q + 0.3V, whichever is less)
©2005 Micron Technology, Inc. All rights reserved.
CC
Q + 0.3V.
1

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