IS42S32800B-6BL ISSI, Integrated Silicon Solution Inc, IS42S32800B-6BL Datasheet - Page 10

• Manufacturer Part Number: IS42S32800B-6BL
• Description: IC SDRAM 256MBIT 166MHZ 90BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32800B-6BL

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-BGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: FBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 180mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S32800B
10
CLK
D Q M
COMMAND
DQ’s
A read burst without the auto precharge function may be interrupted by a BankPrecharge/
PrechargeAll command to the same bank.The following figure shows the optimum time that
BankPrecharge/PrechargeAll command is issued in different CAS#latency.
CLK
DQM
COMMAND
CAS# latency=2
t CK2 , DQ’s
CLK
DQM
COMMAND
CAS# latency=2
: "H" or "L"
tCK2, DQs
: "H" or "L"
: "H" or "L"
tCK2, DQs
NOP
T0
T0
NOP
Read to Write Interval (Burst Length = 4,CAS#Latency =3)
Read to Write Interval (Burst Length = 4,CAS#Latency =2)
T0
NOP
Read to Write Interval (Burst Length = 4,CAS#Latency =2)
READ A
T1
T1
NOP
T1
NOP
READ A
T2
NOP
ACTIVAT E
T2
BANKA
T2
T3
T3
NOP
NOP
T3
NOP
DOUT A
NOP
T4
T4
READ A
NOP
T4
1 Clk Interval
the Write Command
Must be Hi-Z before
WRITEB
NOP
T5
T5
DIN B 0
WRITEA
T5
DIN A 0
WRITE B
DIN B 1
T6
DINB 0
T6
NOP
DIN A 1
NOP
T6
Integrated Silicon Solution, Inc.
NOP
T7
T7
DINB 1
NOP
DIN B 2
T7
NOP
DIN A 2
NOP
NOP
T8
DINB 2
T8
DIN B 3
NOP
T8
DIN A 3
07/21/09
Rev. F