IS42S32800B-6BL ISSI, Integrated Silicon Solution Inc, IS42S32800B-6BL Datasheet - Page 18

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IS42S32800B-6BL

Manufacturer Part Number
IS42S32800B-6BL
Description
IC SDRAM 256MBIT 166MHZ 90BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheet

Specifications of IS42S32800B-6BL

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (8Mx32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-BGA
Organization
8Mx32
Density
256Mb
Address Bus
14b
Access Time (max)
5.5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
3.3V
Package Type
FBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
180mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Manufacturer
Quantity
Price
Part Number:
IS42S32800B-6BL
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS42S32800B-6BL-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS42S32800B-6BLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
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Part Number:
IS42S32800B-6BLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
I
IS42S32800B
18
This bit is used to select the burst write length.
8
9
Test Mode field (A8~A7)
These two bits are used to enter the test mode and must be programmed to “00”in normal operation.
Write Burst Length (A9)
No-Operation command
(RAS#=”H”,CAS#=”H”,WE#=”H”)
is Low).This prevents unwanted commands from being registered during idle or wait states.
Burst Stop command
(RAS#=”H”,CAS#=”H”,WE#=”L”)
The Burst Stop command is used to terminate either fixed-length or full-page bursts.This
command is only effective in a read/write burst without the auto precharge function.The terminated
read burst ends after a delay equal to the CAS#latency (refer to the following figure).The
termination of a write burst is shown in the following figure.
CL K
COMMAN D
CAS# latency=2,3
DQ’s
CLK
COMMAND
CAS# latency=2
tCK2,DQ’s
CAS# latency=3
tCK3,DQ’s
Termination of a Burst Read Operation (Burst Length > 4,CAS#Latency =2,3)
A9
0
1
A8
0
0
1
The No-Operation command is used to perform a NOP to the SDRAM which is selected (CS#
READ A
T0
T0
Termination of a Burst Write Operation (Burst Length =X)
NOP
Write Burst Length
Burst
Single Bit
A7
0
1
X
WRITE A
DIN A 0
T 1
T 1
NOP
Test Mode
normal mode
Vendor Use Only
Vendor Use Only
DOUT A 0
DIN A 1
T2
NOP
T2
NOP
DOUT A 0
DOUT A 1
DIN A 2
T3
NOP
T3
NOP
Input Data for the Write is masked.
Burst Stop
Burst Stop
don’t care
DOUT A 2
DOUT A 1
T4
T4
DOUT A 2
DOUT A 3
T5
NOP
The Burst ends after a delay equal to the CAS# latency.
T5
NOP
DOUT A 3
T6
NOP
T6
NOP
Integrated Silicon Solution, Inc.
T7
NOP
T7
NOP
I
NOP
T 8
NOP
T 8
07/21/09
Rev. F
®

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