IS42S32800B-6BL ISSI, Integrated Silicon Solution Inc, IS42S32800B-6BL Datasheet - Page 20

• Manufacturer Part Number: IS42S32800B-6BL
• Description: IC SDRAM 256MBIT 166MHZ 90BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32800B-6BL

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-BGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: FBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 180mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S32800B
20
DC RECOMMENDED OPERATING CONDITIONS
Notes:
1. All voltages are referenced to V
2. V
3. V
I
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE CHARACTERISTICS
(At T
Notes:
1. Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant
Symbol
V
V
V
V
I
P
T
T
to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute
Maximum Rating conditions for extended periods may affect device reliability.
IH
IL
O
Symbol
Symbol
DD
DDQ
I
OPT
STG
O
D
(undershoot): V
A
(overshoot): V
V
C
V
C
V
C
V
= 0 ~ 70°C, V
DDQ
CLK
DD
I
IH
IL
IN
/
O
IH
IL
(max) = V
Parameter
Supply Voltage
Supply Voltage for DQ
High Level Input Voltage (all Inputs)
Low Level Input Voltage (all Inputs)
Parameter
Input Capacitance, address & control pin
I
Data Input/Output Capacitance
(min) = - 2V (pulse width 3ns)
nput Capacitance, CLK pin
Supply Voltage (with respect to V
Supply Voltage for Output (with respect to V
Input Voltage
Output Voltage
Short circuit output current
Power Dissipation (
Operating Temperature
Storage Temperature
Parameters
DD
= V
DD
SS
DDQ
=0V
+ 2V (pulse width 3ns)
= 3.3 ± 0.3V, V
(with respect to V
(with respect to V
T
A
= 25 °C)
(1)
SS
= V
SS
SS
SSQ
)
Com.
Ind.
SSQ
)
)
= 0V , unless otherwise noted)
Min.
-0.3
3.0
2.0
3.0
SSQ
)
–1.0 to V
–0.5 to V
Typ.
Min.
-40 to +85
3.3
3.3
3.0
–65 to +150
1.5
1.5
–0.5 to +4.6
–0.5 to +4.6
—
—
0 to +70
Rating
50
1
DDQ
DD
+0.5
V
+0.5
DD
Max.
Max.
3.6
3.6
3.0
3.0
5.5
+0.8
Integrated Silicon Solution, Inc.
+ 0.3
Unit
mA
°C
°C
W
V
V
V
V
Unit
Unit
pF
pF
pF
V
V
V
V
I
07/21/09
Rev. F
®