IS64WV51216BLL-10MA3 ISSI, Integrated Silicon Solution Inc, IS64WV51216BLL-10MA3 Datasheet - Page 11

• Manufacturer Part Number: IS64WV51216BLL-10MA3
• Description: IC SRAM 8MBIT 10NS 48MBGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS64WV51216BLL-10MA3

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 8M (512K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 2.4 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 48-MBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61WV51216ALL
IS61WV51216BLL
IS64WV51216BLL
READ CYCLE NO. 2
Integrated Silicon Solution, Inc. — www.issi.com
Rev. F
10/01/09
AC WAVEFORMS
READ CYCLE NO. 1
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE = V
3. Address is valid prior to or coincident with CE LOW transitions.
ADDRESS
ADDRESS
D
D
OUT
OUT
OE
CE
HIGH-Z
t
LZCE
(1,3)
(1,2)
PREVIOUS DATA VALID
(CE and OE Controlled)
(Address Controlled) (CE = OE = V
t
AA
t
DOE
t
t
LZOE
ACE
IL
.
t
OHA
t
RC
t
AA
IL
t
)
RC
DATA VALID
t
HZCE
DATA VALID
t
t
t
OHA
OHA
HZOE
CE_RD2.eps
READ1.eps
11