IS64WV51216BLL-10MA3 ISSI, Integrated Silicon Solution Inc, IS64WV51216BLL-10MA3 Datasheet - Page 8

• Manufacturer Part Number: IS64WV51216BLL-10MA3
• Description: IC SRAM 8MBIT 10NS 48MBGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS64WV51216BLL-10MA3

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 8M (512K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 2.4 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 48-MBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61WV51216ALL
IS61WV51216BLL
IS64WV51216BLL
POWER SUPPLY CHARACTERISTICS
I
Note:
1. At f = f
2. Typical values are measured at V
8
CC
Symbol Parameter
I
I
I
CC
SB
SB
1
1
2
MAX
V
Supply Current
Operating
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
DD
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Dynamic Operating
Test Conditions
V
I
V
I
V
V
CE ≥ V
V
CE ≥ V
V
V
OUT
OUT
DD
DD
DD
DD
IN
DD
IN
IN
= V
≥ V
= 3.0V, T
= Max.,
= Max.,
= Max.,
= Max.,
= 0 mA, f = f
= 0 mA, f = 0
≤ 0.2V, f = 0
IH
IH
DD
DD
, f = 0
or V
– 0.2V,
– 0.2V, or
IL
A
MAX
= 25
(1)
o
C and not 100% tested.
(Over Operating Range)
Com.
Com.
Com.
Com.
Auto.
typ.
Auto.
Auto.
Auto.
typ.
Ind.
Ind.
Ind.
Ind.
(2)
(2)
Min.
—
—
—
—
—
—
—
—
—
—
—
—
-8
Integrated Silicon Solution, Inc. — www.issi.com
Max.
110
115
85
90
30
35
20
—
—
—
25
—
Min. Max.
—
—
—
—
—
—
—
—
—
—
—
—
-10
60
4
140
110
90
95
85
90
30
35
70
20
25
60
Min. Max.
—
—
—
—
—
—
—
—
—
—
—
—
-20
100
50
60
45
55
90
30
35
70
15
20
60
Unit
mA
mA
mA
mA
10/01/09
Rev. F