IS64WV51216BLL-10MA3 ISSI, Integrated Silicon Solution Inc, IS64WV51216BLL-10MA3 Datasheet - Page 4

• Manufacturer Part Number: IS64WV51216BLL-10MA3
• Description: IC SRAM 8MBIT 10NS 48MBGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS64WV51216BLL-10MA3

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 8M (512K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 2.4 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 48-MBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61WV51216ALL
IS61WV51216BLL
IS64WV51216BLL
TRUTH TABLE
CAPACITANCE
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
4
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
Mode
Not Selected
Output Disabled
Read
Write
Symbol
C
C
Symbol
V
V
T
P
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
STG
IN
TERM
DD
T
I/O
Parameter
Terminal Voltage with Respect to GND
V
Storage Temperature
Power Dissipation
DD
Parameter
Input Capacitance
Input/Output Capacitance
Relates to GND
A
(1,2)
= 25°C, f = 1 MHz, V
WE
WE
WE
WE
WE
X
H
X
H
H
H
L
L
L
CE
CE
CE
CE
CE
H
L
L
L
L
L
L
L
L
DD
OE
OE
OE
OE
OE
= 3.3V.
X
H
X
X
X
X
L
L
L
(1)
LB
LB
LB
LB
LB
X
X
H
H
H
L
L
L
L
Conditions
V
V
OUT
IN
= 0V
UB
UB
UB
UB
UB
= 0V
X
X
H
H
H
L
L
L
L
–0.5 to V
–65 to +150
–0.3 to 4.0
Value
1.0
DD
Integrated Silicon Solution, Inc. — www.issi.com
+ 0.5
I/O0-I/O7
High-Z
High-Z
High-Z
High-Z
High-Z
D
D
D
D
OUT
OUT
Max.
IN
IN
6
8
Unit
°C
W
V
V
I/O PIN
I/O8-I/O15
Unit
pF
pF
High-Z
High-Z
High-Z
High-Z
High-Z
D
D
D
D
OUT
OUT
IN
IN
V
DD
I
SB
Current
1
I
I
I
CC
CC
CC
, I
SB
2
10/01/09
Rev. F