IS64WV51216BLL-10MA3 ISSI, Integrated Silicon Solution Inc, IS64WV51216BLL-10MA3 Datasheet - Page 4

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IS64WV51216BLL-10MA3

Manufacturer Part Number
IS64WV51216BLL-10MA3
Description
IC SRAM 8MBIT 10NS 48MBGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS64WV51216BLL-10MA3

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
8M (512K x 16)
Speed
10ns
Interface
Parallel
Voltage - Supply
2.4 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Package / Case
48-MBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS64WV51216BLL-10MA3
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS64WV51216BLL-10MA3
Manufacturer:
ISSI
Quantity:
8 000
Part Number:
IS64WV51216BLL-10MA3-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS61WV51216ALL
IS61WV51216BLL
IS64WV51216BLL
TRUTH TABLE
CAPACITANCE
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
4
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
Mode
Not Selected
Output Disabled
Read
Write
Symbol
C
C
Symbol
V
V
T
P
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
STG
IN
TERM
DD
T
I/O
Parameter
Terminal Voltage with Respect to GND
V
Storage Temperature
Power Dissipation
DD
Parameter
Input Capacitance
Input/Output Capacitance
Relates to GND
A
(1,2)
= 25°C, f = 1 MHz, V
WE
WE
WE
WE
WE
X
H
X
H
H
H
L
L
L
CE
CE
CE
CE
CE
H
L
L
L
L
L
L
L
L
DD
OE
OE
OE
OE
OE
= 3.3V.
X
H
X
X
X
X
L
L
L
(1)
LB
LB
LB
LB
LB
X
X
H
H
H
L
L
L
L
Conditions
V
V
OUT
IN
= 0V
UB
UB
UB
UB
UB
= 0V
X
X
H
H
H
L
L
L
L
–0.5 to V
–65 to +150
–0.3 to 4.0
Value
1.0
DD
Integrated Silicon Solution, Inc. — www.issi.com
+ 0.5
I/O0-I/O7
High-Z
High-Z
High-Z
High-Z
High-Z
D
D
D
D
OUT
OUT
Max.
IN
IN
6
8
Unit
°C
W
V
V
I/O PIN
I/O8-I/O15
Unit
pF
pF
High-Z
High-Z
High-Z
High-Z
High-Z
D
D
D
D
OUT
OUT
IN
IN
V
DD
I
SB
Current
1
I
I
I
CC
CC
CC
, I
SB
2
10/01/09
Rev. F

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