IS64WV51216BLL-10MA3 ISSI, Integrated Silicon Solution Inc, IS64WV51216BLL-10MA3 Datasheet - Page 7

• Manufacturer Part Number: IS64WV51216BLL-10MA3
• Description: IC SRAM 8MBIT 10NS 48MBGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS64WV51216BLL-10MA3

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 8M (512K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 2.4 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 48-MBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61WV51216ALL
IS61WV51216BLL
IS64WV51216BLL
AC TEST CONDITIONS (HIGH SPEED)
Integrated Silicon Solution, Inc. — www.issi.com
Rev. F
10/01/09
AC TEST LOADS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level (V
Output Load
OUTPUT
Z
O
Figure 1.
= 50Ω
Ref
)
See Figures 1 and 2
0.4V to V
30 pF
Including
jig and
scope
50Ω
(2.4V-3.6V)
1.5ns
V
Unit
DD
DD
/2
1.5V
-0.3V
See Figures 1 and 2
0.4V to V
V
(3.3V + 5%)
OUTPUT
DD
1.5ns
/2 + 0.05
Unit
3.3V
DD
-0.3V
Including
jig and
scope
5 pF
Figure 2.
319 Ω
See Figures 1 and 2
0.4V to V
(1.65V-2.2V)
1.5ns
V
Unit
DD
353 Ω
DD
/2
-0.2V
7