MT46H64M32L2CG-6 IT:A TR Micron Technology Inc, MT46H64M32L2CG-6 IT:A TR Datasheet - Page 7

• Manufacturer Part Number: MT46H64M32L2CG-6 IT:A TR
• Description: IC DDR SDRAM 2GBIT 152VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H64M32L2CG-6 IT:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 2G (64M x 32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 152-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Table 5:
Table 6:
PDF: 09005aef833913f1/Source: 09005aef833913d6
ddr_mobile_sdram_only_152b_omap_pop.fm - Rev. E 06/09 EN
Parameters/Conditions
Parameters
V
Voltage on any pin relative to V
Storage temperature range
Supply voltage
I/O supply voltage
Operating temperature range
DD
, V
DDQ S
upply voltage relative to V
Absolute Maximum Ratings
Note 1 applies to all parameters in this table.
Recommended Operating Conditions
Notes:
Stresses greater than those listed under “Absolute Maximum Ratings” may cause perma-
nent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
1. V
SS
DD
Commercial
Industrial
and V
SS
DDQ
must be within 300mV of each other at all times. V
V
Symbol
DD
Symbol
152-Ball x32 Mobile LPDDR (only) PoP (TI-OMAP)
V
, V
V
V
IN
DDQ
DD
DDQ
7
Min
–1.0
–0.5
–55
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
1.70
1.70
-40
0
2.4 or (V
1.80
1.80
Typ
whichever is less
–
–
Electrical Specifications
Max
+150
DDQ
2.4
©2008 Micron Technology, Inc. All rights reserved.
+ 0.3V),
DDQ
Max
1.95
1.95
+70
+85
must not exceed V
Unit
Unit
°C
°C
°C
V
V
V
V
DD
.