MT46V64M16TG-6T:A TR Micron Technology Inc, MT46V64M16TG-6T:A TR Datasheet - Page 33

• Manufacturer Part Number: MT46V64M16TG-6T:A TR
• Description: IC DDR SDRAM 1GBIT 6NS 66TSOP
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V64M16TG-6T:A TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 1G (64M x 16)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 275mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 21:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
Voltage
(V)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
Reduced Output Drive Characteristics
Characteristics are specified under best, worst, and nominal process variation/conditions
Nominal
Low
10.3
13.6
16.9
19.9
22.3
24.7
26.9
29.0
30.6
31.8
32.8
33.5
34.0
34.3
34.5
34.8
35.1
35.4
35.6
35.8
36.1
36.3
36.5
36.7
36.8
3.4
6.9
Pull-Down Current (mA)
Nominal
High
11.4
15.1
18.7
22.1
25.0
28.2
31.3
34.1
36.9
39.5
42.0
44.4
46.6
48.6
50.5
52.2
53.9
55.0
56.1
57.1
57.7
58.2
58.7
59.2
59.6
3.8
7.6
Min
10.4
13.0
15.7
18.2
20.8
22.4
24.1
25.4
26.2
26.6
26.8
27.0
27.2
27.4
27.7
27.8
28.0
28.1
28.2
28.3
28.3
28.4
28.5
28.6
2.6
5.2
7.8
Max
14.6
19.2
23.6
28.0
32.2
35.8
39.5
43.2
46.7
50.0
53.1
56.1
58.7
61.4
63.5
65.6
67.7
69.8
71.6
73.3
74.9
76.4
77.7
78.8
79.7
5.0
9.9
33
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Nominal
Electrical Specifications – DC and AC
–10.3
–13.6
–16.9
–19.4
–21.5
–23.3
–24.8
–26.0
–27.1
–27.8
–28.3
–28.6
–28.7
–28.9
–28.9
–29.0
–29.2
–29.2
–29.3
–29.5
–29.5
–29.6
–29.7
–29.8
–29.9
Low
–3.5
–6.9
1Gb: x4, x8, x16 DDR SDRAM
Pull-Up Current (mA)
Nominal
–12.0
–15.7
–19.3
–22.9
–26.5
–30.1
–33.6
–37.1
–40.3
–43.1
–45.8
–48.4
–50.7
–52.9
–55.0
–56.8
–58.7
–60.0
–61.2
–62.4
–63.1
–63.8
–64.4
–65.1
–65.8
High
–4.3
–7.8
©2003 Micron Technology, Inc. All rights reserved.
–10.4
–13.0
–15.7
–18.2
–20.4
–21.6
–21.9
–22.1
–22.2
–22.3
–22.4
–22.6
–22.7
–22.7
–22.8
–22.9
–22.9
–23.0
–23.0
–23.1
–23.2
–23.2
–23.3
–23.3
Min
–2.6
–5.2
–7.8
–14.6
–19.2
–23.6
–28.0
–32.2
–35.8
–39.5
–43.2
–46.7
–50.0
–53.1
–56.1
–58.7
–61.4
–63.5
–65.6
–67.7
–69.8
–71.6
–73.3
–74.9
–76.4
–77.7
–78.8
–79.7
Max
–5.0
–9.9