MT46V64M16TG-6T:A TR Micron Technology Inc, MT46V64M16TG-6T:A TR Datasheet - Page 77

• Manufacturer Part Number: MT46V64M16TG-6T:A TR
• Description: IC DDR SDRAM 1GBIT 6NS 66TSOP
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V64M16TG-6T:A TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 1G (64M x 16)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 275mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 49:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
Case 1: t AC (MIN) and t DQSCK (MIN)
Case 2: t AC (MAX) and t DQSCK (MAX)
Command
BA0, BA1
Address
DQ
DQ
DQS
DQS
CK#
CKE
A10
DM
CK
6
6
t IS
t IS
Bank READ – with Auto Precharge
NOP
T0
t IH
1
t IH
Notes:
Bank x
t IS
IS
Row
ACT
Row
T1
1. NOP commands are shown for ease of illustration; other commands may be valid at these
2. BL = 4.
3. The READ command can only be applied at T3 if
4. Enable auto precharge.
5.
6. DO n = data-out from column n; subsequent elements are provided in the programmed
7. Refer to Figure 33 on page 61, Figure 34 on page 62, and Figure 35 on page 63 for detailed
IH
t IH
t CK
times.
t
order.
DQS and DQ timing.
RP starts only after
t RAS
t RC
t RCD, t RAP 3
NOP
T2
1
t CH
t CL
READ
t IS
Bank x
4
Col n
t
RAS has been satisfied.
T3
2,3
t IH
t LZ (MIN)
CL = 2
77
NOP
T4
t RPRE
1
t LZ (MIN)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t RPRE
NOP
T5
t DQSCK (MIN)
DO
t DQSCK (MAX)
1
n
t
t AC (MIN)
DO
RAP is satisfied at T3.
t AC (MAX)
n
T5n
1Gb: x4, x8, x16 DDR SDRAM
t RP 5
NOP
T6
Transitioning Data
1
t HZ (MAX)
T6n
©2003 Micron Technology, Inc. All rights reserved.
t RPST
t RPST
NOP
T7
1
Operations
Don’t Care
Bank x
ACT
T8
Row
Row