MT29F2G08ABAEAWP-IT:E Micron Technology Inc, MT29F2G08ABAEAWP-IT:E Datasheet - Page 105

• Manufacturer Part Number: MT29F2G08ABAEAWP-IT:E
• Description: IC FLASH 2G 3.3V 2KBPG 48TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT29F2G08ABAEAWP-IT:E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 2G (256M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / Rohs Status: Compliant

PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
Notes:
Note:
Table 22: Capacitance
Notes 1–2 apply to all parameters and conditions
Table 23: Test Conditions
Description
Input capacitance
Input/output capacitance (I/O)
Parameter
Input pulse levels
Input rise and fall times
Input and output timing levels
Output load
Output load
1. These parameters are verified in device characterization and are not 100% tested.
2. Test conditions: T
1. Verified in device characterization, not 100% tested.
C
= 25°C; f = 1 MHz; Vin = 0V.
105
1.8V
3.3V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x8, x16 NAND Flash Memory
1 TTL GATE and CL = 30pF (1.8V)
1 TTL GATE and CL = 50pF (3.3V)
1 TTL GATE and CL = 30pF (1.8V)
1 TTL GATE and CL = 50pF (3.3V)
Symbol
C
C
IO
IN
0.0V to V
Value
V
Electrical Specifications
2.5ns
5.0ns
CC
/2
CC
Max
© 2009 Micron Technology, Inc. All rights reserved.
10
10
Unit
pF
pF
Notes
1
1