MT29F2G08ABAEAWP-IT:E Micron Technology Inc, MT29F2G08ABAEAWP-IT:E Datasheet - Page 96

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MT29F2G08ABAEAWP-IT:E

Manufacturer Part Number
MT29F2G08ABAEAWP-IT:E
Description
IC FLASH 2G 3.3V 2KBPG 48TSOP
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F2G08ABAEAWP-IT:E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
2G (256M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / Rohs Status
Compliant

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Figure 74: TWO-PLANE INTERNAL DATA MOVE with TWO-PLANE RANDOM DATA READ
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
R/B#
R/B#
R/B#
I/Ox
I/Ox
I/Ox
RE#
RE#
RE#
1
2
00h
85h
1st-plane destination
Address (5 cycles)
1st-plane source
Address (5 cycles)
2nd-plane source
Data output
Data from
00h
11h
2nd-plane source
Address (5 cycles)
t DBSY
05h
source column address
85h
Address (2 cycles)
35h
2nd-plane
2nd-plane destination
Address (5 cycles)
t R
96
Data from 1st-plane source
E0h
Optional
Data output
Micron Technology, Inc. reserves the right to change products or specifications without notice.
10h
2Gb: x8, x16 NAND Flash Memory
Data from 2nd-plane source
from new column address
Data output
t PROG
06h
70h
Two-Plane Operations
2nd-plane source address
Address (5 cycles)
© 2009 Micron Technology, Inc. All rights reserved.
Status
E0h
1
2

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