MT41J128M8HX-187E:D TR Micron Technology Inc, MT41J128M8HX-187E:D TR Datasheet - Page 81

• Manufacturer Part Number: MT41J128M8HX-187E:D TR
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT41J128M8HX-187E:D TR

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (128M x 8)
• Speed: 533MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1377-1

Figure 36: Nominal Slew Rate for
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_3.fm - Rev. F 11/08 EN
V
V
V
V
IL
IL
IH
IH
(
(
(
(
DC
AC
AC
DC
V
Notes:
) MAX
) MAX
REF
DQS#
) MIN
) MIN
V
DQS
CK#
DD
(
V
CK
DC
Q
SS
Hold slew rate
)
rising signal
1. Both the clock and the strobe are drawn on different time scales.
DC to V
region
=
REF
t
V
IH (Command and Address – Clock)
REF
(
DC
slew rate
Nominal
t IS
) - V
ΔTR
IL
(
DC
) MAX
t IH
81
ΔTR
Hold slew rate
Micron Technology, Inc., reserves the right to change products or specifications without notice.
falling signal
1Gb: x4, x8, x16 DDR3 SDRAM
DC to V
slew rate
Nominal
region
t IS
=
REF
V
IH
(
DC
t IH
) MIN - V
©2006 Micron Technology, Inc. All rights reserved.
ΔTF
ΔTF
Speed Bin Tables
REF
(
DC
)