MT41J512M8THU-15E:A Micron Technology Inc, MT41J512M8THU-15E:A Datasheet - Page 156

• Manufacturer Part Number: MT41J512M8THU-15E:A
• Description: IC DDR3 SDRAM 4GBIT 82FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT41J512M8THU-15E:A

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 4G (512M x 8)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 82-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 98: Power-Down Entry After READ or READ with Auto Precharge (RDAP)
Figure 99: Power-Down Entry After WRITE
PDF: 09005aef826aaadc/Source: 09005aef82a357c3
DDR3_D4.fm - Rev G 2/09 EN
DQS, DQS#
DQS, DQS#
Command
Command
Address
Address
DQ BC4
DQ BC4
DQ BL8
DQ BL8
CKE
CK#
CK#
CKE
CK
CK
WRITE
READ/
Valid
RDAP
Valid
T0
T0
NOP
NOP
T1
T1
Notes:
WL = AL + CWL
RL = AL + CL
NOP
Ta0
NOP
Ta0
1. CKE can go LOW 2
NOP
Ta1
NOP
Ta1
NOP
NOP
Ta2
Ta2
DI
DI
n
n
t RDPDEN
DI
DI
n
n
n + 1
n + 1
DI
DI
n + 1
n + 1
DI
DI
n + 2
n + 2
NOP
NOP
Ta3
Ta3
DI
DI
n + 2
n + 2
t WRPDEN
DI
t
DI
CK earlier if BC4MRS.
n + 3
n + 3
DI
DI
n + 3
n + 3
DI
DI
n + 4
NOP
NOP
Ta4
Ta4
DI
n + 4
DI
n + 5
156
DI
n+ 5
DI
n + 6
NOP
Ta5
NOP
Ta5
DI
n + 6
DI
n + 7
DI
n + 7
DI
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Ta6
NOP
NOP
Ta6
self refresh entry
Power-down or
t IS
NOP
NOP
Ta7
Ta7
2Gb: x4, x8, x16 DDR3 SDRAM
t CPDED
t WR
Indicates a Break In
Time Scale
Indicates A Break in
Time Scale
NOP
Tb0
NOP
Ta8
self refresh entry 1
Power-down or
t IS
Tb1
NOP
Ta9
©2006 Micron Technology, Inc. All rights reserved.
t CPDED
Transitioning Data
t PD
Transitioning Data
Ta10
NOP
Tb2
Operations
t PD
Ta11
Tb3
Don’t Care
Don’t Care
Ta12
Tb4