NAND512W3A2CN6E NUMONYX, NAND512W3A2CN6E Datasheet - Page 40

IC FLASH 512MBIT 48TSOP

NAND512W3A2CN6E

Manufacturer Part Number
NAND512W3A2CN6E
Description
IC FLASH 512MBIT 48TSOP
Manufacturer
NUMONYX
Datasheet

Specifications of NAND512W3A2CN6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
512M (64M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Cell Type
NAND
Density
512Mb
Access Time (max)
12us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
26b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
64M
Supply Current
20mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND512W3A2CN6E
Manufacturer:
MICRON
Quantity:
1 500
Part Number:
NAND512W3A2CN6E
Manufacturer:
ST
0
Part Number:
NAND512W3A2CN6E
Manufacturer:
ST
Quantity:
20 000
DC and AC parameters
Figure 22. Data Input Latch AC waveforms
Figure 23. Sequential data output after read AC waveforms
1. CL = Low, AL = Low, W = High.
40/55
CL
AL
I/O
W
E
(ALSetup time)
tALLWH
tWLWH
(Data Setup time)
tDVWH
tWLWL
Data In 0
(Data Hold time)
tDVWH
tWHDX
tWLWH
Data In 1
tDVWH
tWHDX
Data In
Last
tEHQX
tWLWH
tWHDX
(E Hold time)
tWHEH
(CL Hold time)
tWHCLH
tEHQZ
NAND512-A2C
ai08031b
ai13107

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