NAND512W3A2CN6E NUMONYX, NAND512W3A2CN6E Datasheet - Page 44

IC FLASH 512MBIT 48TSOP

NAND512W3A2CN6E

Manufacturer Part Number
NAND512W3A2CN6E
Description
IC FLASH 512MBIT 48TSOP
Manufacturer
NUMONYX
Datasheet

Specifications of NAND512W3A2CN6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
512M (64M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Cell Type
NAND
Density
512Mb
Access Time (max)
12us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
26b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
64M
Supply Current
20mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Compliant

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DC and AC parameters
Figure 28. Page program AC waveforms
44/55
RB
CL
I/O
AL
W
R
E
Page Program
Setup Code
80h
(Write Cycle time)
tWLWL
cycle 1
Add.N
cycle 2
Add.N
Address Input
cycle 3
Add.N
cycle 4
Add.N
tWLWL
N
Data Input
tWHBL
(Program Busy time)
Last
tWLWL
Confirm
tBLBH2
Code
10h
Program
Page
Read Status Register
70h
NAND512-A2C
SR0
ai08037

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