NAND512W3A2CN6E NUMONYX, NAND512W3A2CN6E Datasheet - Page 7

• Manufacturer Part Number: NAND512W3A2CN6E
• Description: IC FLASH 512MBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND512W3A2CN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 512M (64M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 12us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 26b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

NAND512-A2C
Table 2.
Figure 1.
NAND512-A2C
Reference
NAND512W3A2C
NAND512R3A2C
NAND512R4A2C
Product description
Logic diagram
Part number
Density
Mbits
512
width
Bus
x16
x8
WP
CL
AL
W
R
E
512+16
256+8
words
Page
bytes
size
16K+512
8K+256
NAND flash
Block
words
bytes
size
V DD
V SS
4096 blocks
32 pages x
Memory
array
8
1.7 to 1.95 V
1.7 to 1.95 V
2.7 to 3.6 V
Operating
voltage
RB
I/O8-I/O15, x16
I/O0-I/O7, x8/x16
Random
access
15 µs
12 µs
15 µs
AI07557C
Max
Sequential
access
50 ns
30 ns
50 ns
Min
Timings
program
200 µs
Page
Typ
Block
erase
2 ms
Typ
Description
VFBGA55
VFBGA63
Package
TSOP48
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