NAND512W3A2CN6E NUMONYX, NAND512W3A2CN6E Datasheet - Page 48

• Manufacturer Part Number: NAND512W3A2CN6E
• Description: IC FLASH 512MBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND512W3A2CN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 512M (64M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 12us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 26b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

DC and AC parameters
Figure 35. Resistor value versus waveform timings for Ready/Busy signal
1. T = 25°C.
10.2
Figure 36. Data protection
48/55
Data protection
The Numonyx NAND device is designed to guarantee data protection during power
transitions.
A V
In the V
Low (V
below
V DD
DD
WP
(Figure
detection circuit disables all NAND operations, if V
IL
DD
) to guarantee hardware protection during power transitions as shown in the figure
Nominal Range
range from V
36).
V LKO
Locked
LKO
to the lower limit of nominal range, the WP pin should be kept
Locked
DD
is below the V
Ai13188
LKO
NAND512-A2C
threshold.