TC55VBM316AFTN55 Toshiba, TC55VBM316AFTN55 Datasheet - Page 11

• Manufacturer Part Number: TC55VBM316AFTN55
• Description: IC SRAM 8MBIT 55NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC55VBM316AFTN55

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 8M (512K x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TC55W800FT-55(M); TC55W800FT-55M; TC55W800FT5(M); TC55W800FT5(MWR); TC55W800FT5(Y); TC55W800FT55(M); TC55W800FT55(MWR); TC55W800FT55M; TC55W800FT55MLA; TC55W800FT5M; TC55W800FT5M; TC55W800FT5Y; TC55W800FT5Y

DATA RETENTION CHARACTERISTICS (
V
I
t
t
CE2 CONTROLLED DATA RETENTION MODE
UB LB
CE1
DDS2
CDR
R
DH
SYMBOL
,
UB , LB
CONTROLLED DATA RETENTION MODE
2.3 V
2.3 V
2.3 V
GND
GND
GND
CE
CONTROLLED DATA RETENTION MODE
V
V
V
V
V
V
V
DD
DD
DD
IH
IH
IH
1
IL
Data Retention Supply Voltage
Standby Current
Chip Deselect to Data Retention Mode Time
Recovery Time
V
V
CE2
V
DD
DD
DD
PARAMETER
V
V
(See Note 2)
(See Note 5)
DH
DH
t
CDR
t
t
CDR
CDR
3.6 V Ta
3.0 V
Ta
Ta
40~85°C
40~40°C
40~85°C
Ta
DATA RETENTION MODE
DATA RETENTION MODE
DATA RETENTION MODE
(See Note 3)
(See Note 1)
V
V
40° to 85°C
DD
DD
(See Note 4)
0.2 V
0.2 V
0.2 V
TC55VBM316AFTN/ASTN40,55
MIN
1.5
0
5
)
TYP
(See Note 2)
(See Note 5)
t
t
2002-08-05 11/15
R
R
t
R
MAX
3.6
10
2
5
UNIT
ms
ns
V
A