TC55VBM316AFTN55 Toshiba, TC55VBM316AFTN55 Datasheet - Page 5
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TC55VBM316AFTN55
Manufacturer Part Number
TC55VBM316AFTN55
Description
IC SRAM 8MBIT 55NS 48TSOP
Manufacturer
Toshiba
Datasheet
1.TC55VBM316AFTN55.pdf
(15 pages)
Specifications of TC55VBM316AFTN55
Format - Memory
RAM
Memory Type
SRAM
Memory Size
8M (512K x 16)
Speed
55ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
TC55W800FT-55(M)
TC55W800FT-55M
TC55W800FT5(M)
TC55W800FT5(MWR)
TC55W800FT5(Y)
TC55W800FT55(M)
TC55W800FT55(MWR)
TC55W800FT55M
TC55W800FT55MLA
TC55W800FT5M
TC55W800FT5M
TC55W800FT5Y
TC55W800FT5Y
TC55W800FT-55M
TC55W800FT5(M)
TC55W800FT5(MWR)
TC55W800FT5(Y)
TC55W800FT55(M)
TC55W800FT55(MWR)
TC55W800FT55M
TC55W800FT55MLA
TC55W800FT5M
TC55W800FT5M
TC55W800FT5Y
TC55W800FT5Y
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TC55VBM316AFTN55
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
TC55VBM316AFTN55A
Manufacturer:
TOSHIBA
Quantity:
5 704
Company:
Part Number:
TC55VBM316AFTN55A
Manufacturer:
TOSHIBA
Quantity:
5 704
Company:
Part Number:
TC55VBM316AFTN55A
Manufacturer:
OKI
Quantity:
1 235
AC CHARACTERISTICS AND OPERATING CONDITIONS
(Ta
READ CYCLE
t
t
t
t
t
t
t
t
t
t
t
t
t
WRITE CYCLE
t
t
t
t
t
t
t
t
t
t
Note:
RC
ACC
CO1
CO2
OE
BA
COE
OEE
BE
OD
ODO
BD
OH
WC
WP
CW
BW
AS
WR
ODW
OEW
DS
DH
SYMBOL
SYMBOL
40° to 85°C, V
t
an output voltage level.
OD
, t
ODO
Read Cycle Time
Address Access Time
Chip Enable(
Chip Enable(CE2) Access Time
Output Enable Access Time
Data Byte Control Access Time
Chip Enable Low to Output Active
Output Enable Low to Output Active
Data Byte Control Low to Output Active
Chip Enable High to Output High-Z
Output Enable High to Output High-Z
Data Byte Control High to Output High-Z
Output Data Hold Time
Write Cycle Time
Write Pulse Width
Chip Enable to End of Write
Data Byte Control to End of Write
Address Setup Time
Write Recovery Time
R/W Low to Output High-Z
R/W High to Output Active
Data Setup Time
Data Hold Time
, t
BD
and t
DD
ODW
CE ) Access Time
2.7 to 3.6 V)
1
are specified in time when an output becomes high impedance, and are not judged depending on
PARAMETER
PARAMETER
TC55VBM316AFTN/ASTN40,55
MIN
MIN
40
40
30
35
35
20
10
5
0
5
0
0
0
0
TC55VBM316AFTN/ASTN
TC55VBM316AFTN/ASTN
40
40
MAX
MAX
40
40
40
25
40
20
20
20
20
2002-08-05 5/15
MIN
MIN
55
10
55
40
45
45
25
5
0
5
0
0
0
0
55
55
MAX
MAX
55
55
55
30
55
25
25
25
25
UNIT
UNIT
ns
ns