TC58FVM6B2ATG-65 Toshiba, TC58FVM6B2ATG-65 Datasheet - Page 15

• Manufacturer Part Number: TC58FVM6B2ATG-65
• Description: IC FLASH 64MBIT 65NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC58FVM6B2ATG-65

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 64M (8Mx8, 4Mx16)
• Speed: 65ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

COMMON FLASH MEMORY INTERFACE (CFI)
Query command followed by the address. In Word Mode DQ8~DQ15 all output 0s. To exit this mode, input the
Reset command.
CFI CODE TABLE
The TC58FVM6T2A/B2A conforms to the CFI specifications. To read information from the device, input the
ADDRESS A6~A0
1Ch
1Dh
10h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
1Bh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
2Ah
2Bh
11h
DATA DQ15~DQ0
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
0023h
0036h
0000h
0000h
0004h
0000h
000Ah
0000h
0005h
0000h
0004h
0000h
0017h
0002h
0000h
0004h
0000h
ASCII string “QRY”
Primary OEM command set
Address for primary extended table
Alternate OEM command set
Address for alternate OEM extended table
V
V
V
V
Typical time-out per single byte/word write (2
Typical time-out for minimum size buffer write (2
Typical time-out per individual block erase (2
Typical time-out for full chip erase (2
Maximum time-out for byte/word write (2
Maximum time-out for buffer write (2
Maximum time-out per individual block erase (2
Maximum time-out for full chip erase (2
Device Size (2
Flash device interface description
Maximum number of bytes in multi-byte write (2
DD
DD
PP
PP
2: AMD/FJ standard type
0: none exists
DQ7~DQ4: 1 V
DQ3~DQ0: 100 mV
DQ7~DQ4: 1 V
DQ3~DQ0: 100 mV
2: ×8/×16
(min) voltage
(max) voltage
(min) (Write/Erase)
(max) (Write/Erase)
N
byte)
TC58FVM6(T/B)2A(FT/XB)65
DESCRIPTION
N
N
ms)
times typical)
N
N
times typical)
times typical)
N
N
ms)
µs)
2002-10-24 15/61
N
N
N
)
times typical)
µs)