TC58FVM6B2ATG-65 Toshiba, TC58FVM6B2ATG-65 Datasheet - Page 23

• Manufacturer Part Number: TC58FVM6B2ATG-65
• Description: IC FLASH 64MBIT 65NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC58FVM6B2ATG-65

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 64M (8Mx8, 4Mx16)
• Speed: 65ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

AC CHARACTERISTICS AND OPERATING CONDITIONS
* Auto Chip Erase Time and Auto Block Erase Time include internal pre program time .
READ CYCLE
t
t
t
t
t
t
t
t
t
t
t
BLOCK PROTECT
t
t
t
t
t
PROGRAM AND ERASE CHARACTERISTICS
t
t
t
t
t
SYMBOL
SYMBOL
SYMBOL
RC
PRC
ACC
CE
OE
PACC
CEE
OEE
OH
DF1
DF2
VPT
VPS
CESP
VPH
PPLH
PPW
PPAW
PCEW
PBEW
EW
Product name
VDD voltage (V)
Output load capacitance (CL)
Read Cycle Time
Page Read Cycle Time
Address Access Time
Page Access Time
Output Data Hold Time
CE Access Time
OE Access Time
CE to Output Low-Z
OE to Output Low-Z
CE to Output High-Z
OE to Output High-Z
V
V
Auto-Program Time (Byte Mode)
Auto-Program Time (Word Mode)
Auto-Page program time
Auto Chip Erase Time
Auto Block Erase Time
Erase/Program Cycle
CE Set-up Time
OE Hold Time
WE Low-Level Hold Time
ID
ID
Transition Time
Set-up Time
PARAMETER
PARAMETER
PARAMETER
MIN
65
25






0
0
0
30 pF
VDD=2.7-3.6V
MAX
65
65
25
25
25
25





MIN
70
30






0
0
0
100 pF
TC58FVM6(T/B)2A(FT/XB)65
MAX
TC58FVM6T2A/B2A
70
70
30
30
25
25





MIN
10





5
MIN
70
30






0
0
0
30 pF
VDD=2.3-3.6V
MAX
TYP.
MIN
100
0.7
45
95


70
70
30
30



25
25
11

8
4
4
4
4
2002-10-24 23/61
MIN
75
35






0
0
0
100 pF
2400
1350
MAX
MAX
300
300
10






MAX


75
75
35
35



25
25
Cycles
UNIT
UNIT
UNIT
µs
µs
µs
µs
µs
µs
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s