VND810MSP STMicroelectronics, VND810MSP Datasheet - Page 19

• Manufacturer Part Number: VND810MSP
• Description: IC DRVR HISIDE 2CH POWERSO10
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VND810MSP

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 150 mOhm
• Current - Peak Output: 900mA
• Voltage - Supply: 5.5 V ~ 36 V
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Supply Voltage (min): 5.5 V
• Supply Current: 40 mA
• Maximum Power Dissipation: 52000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Operating Temperature: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

3.5
Note:
VND810MSP
Maximum demagnetization energy (V
Figure 26. Maximum turn-off current versus load inductance
Values are generated with R
In case of repetitive pulses, T
must not exceed the temperature specified above for curves B and C.
V
IN
C= repetitive pulse at T
B= repetitive pulse at T
A = single pulse at T
, I
I
L
LM A X (A )
0,1
10
1
1
Demagnetization
Jstart
Jstart
Jstart
L
= 150ºC
jstart
= 0
= 125ºC
= 100ºC
10
(at beginning of each demagnetization) of every pulse
L(mH)
100
Demagnetization
C
B
A
CC
= 13.5V)
1000
Application information
Demagnetization
10000
19/27
t