VND810MSP STMicroelectronics, VND810MSP Datasheet - Page 7

• Manufacturer Part Number: VND810MSP
• Description: IC DRVR HISIDE 2CH POWERSO10
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VND810MSP

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 150 mOhm
• Current - Peak Output: 900mA
• Voltage - Supply: 5.5 V ~ 36 V
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Supply Voltage (min): 5.5 V
• Supply Current: 40 mA
• Maximum Power Dissipation: 52000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Operating Temperature: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

VND810MSP
2.2
2.3
Note:
Thermal data
Table 4.
1. When mounted on a standard single-sided FR-4 board with 0.5cm
2. When mounted on a standard single-sided FR-4 board with 6cm
Electrical characteristics
Values specified in this section are for 8V < V
otherwise stated.
Figure 3.
V
Fn
Symbol
R
R
to all V
all V
thj-lead
thj-amb
= V
CC
CCn
CC
V
pins. Horizontal mounting and no artificial air flow.
IN1
pins. Horizontal mounting and no artificial air flow.
Thermal resistance junction-lead
Thermal resistance junction-ambient
- V
Thermal data (per island)
Current and voltage conventions
V
STAT1
OUTn
I
IN1
V
IN2
during reverse battery condition.
V
STAT2
I
I
I
STAT2
IN2
STAT1
Parameter
STATUS 2
INPUT 2
STATUS 1
INPUT 1
GND
CC
< 36V; -40°C < T
I
OUTPUT 1
OUTPUT 2
GND
2
of Cu (at least 35 µm thick) connected to
V
2
CC
of Cu (at least 35 µm thick) connected
52.4
j
(1)
Electrical specifications
< 150°C, unless
I
V
OUT2
Value
F1
2.4
V
(*)
OUT2
I
V
OUT1
37
OUT1
(2)
V
I
CC
S
°C/W
°C/W
Unit
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