TC58V64BDC Toshiba, TC58V64BDC Datasheet - Page 27

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TC58V64BDC

Manufacturer Part Number
TC58V64BDC
Description
IC 64MBIT NAND FLASH 3V 44-TSOP
Manufacturer
Toshiba
Datasheet

Specifications of TC58V64BDC

Memory Size
8MB
Memory Type
EEPROM - Smart Media
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
(8)
circuit.
RY
We recommend that you use this data as a reference
when selecting a resistor value.
A pull-up resistor needs to be used for termination because the
This data may vary from device to device.
/
BY
: termination for the Ready/Busy pin (
Device
V
V
CC
SS
V
CC
Figure 21.
R
C
L
RY
/
BY
RY
Ready
3.0 V
t
r
/
BY
1.5 ms
1.0 ms
0.5 ms
)
t
f
V
0
CC
1.0 V
1 KW
RY
/
2 KW
BY
Busy
t
r
buffer consists of an open drain
R
t
3 KW
f
2001-10-24 27/33
V
Ta = 25°C
C
CC
L
4 KW
1.0 V
= 100 pF
TC58V64BDC
= 3.3 V
t
r
3.0 V
15 ns
10 ns
5 ns
t
f

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