MT9VDDT3272HG-335G2 Micron Technology Inc, MT9VDDT3272HG-335G2 Datasheet

MODULE DDR SDRAM 256MB 200SODIMM

MT9VDDT3272HG-335G2

Manufacturer Part Number
MT9VDDT3272HG-335G2
Description
MODULE DDR SDRAM 256MB 200SODIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT9VDDT3272HG-335G2

Memory Type
DDR SDRAM
Memory Size
256MB
Speed
167MHz
Package / Case
200-SODIMM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
557-1135
DDR SDRAM SODIMM
MT9VDDT1672H – 128MB
MT9VDDT3272H – 256MB
MT9VDDT6472H – 512MB
For component data sheets, refer to Micron’s Web site:
Features
• 200-pin, small-outline dual in-line memory module
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 128MB (16 Meg x 72), 256MB (32 Meg x 72), and
• Supports ECC error detection and correction
• V
• V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Selectable burst lengths (BL) 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 15.625µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Single rank
• Gold edge contacts
200-Pin SODIMM (MO-224) Figures
Figure 1:
PDF: 09005aef80804052/Source: 09005aef806e057b
DD9C16_32_64x72H.fm - Rev. E 1/08 EN
PCB height: 31.75mm (1.25in)
(SODIMM)
512MB (64 Meg x 72)
architecture; two data accesses per clock cycle
received with data—that is, source-synchronous
data capture
operation
(128MB) and 7.8125µs (256MB, 512MB) maximum
average periodic refresh interval
compatibility
DD
DDSPD
= V
DD
= +2.3V to +3.6V
Q = +2.5V (-40B: V
Low-Profile Layout
Products and specifications discussed herein are subject to change by Micron without notice.
128MB, 256MB, 512MB (x72, ECC, SR) 200-Pin DDR SDRAM SODIMM
DD
= V
DD
1
Q = +2.6V)
www.micron.com
1
Figure 2:
PCB height: 38.10mm (1.5in)
Notes: 1. End of life.
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 200-pin DIMM (standard)
– 200-pin DIMM (Pb-free)
– 5.0ns (200 MHz), 400 MT/s, CL = 3.0
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2.0
– 7.5ns (133 MHz), 266 MT/s, CL = 2.0
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Contact Micron for industrial temperature
3. Not recommended for new designs.
module offerings.
Standard Layout
A
A
2
≤ +85°C)
≤ +70°C)
©2004 Micron Technology, Inc. All rights reserved.
3
3
3
Marking
Features
None
-40B
-26A
-335
-262
-265
G
Y
I

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MT9VDDT3272HG-335G2 Summary of contents

Page 1

ECC, SR) 200-Pin DDR SDRAM SODIMM DDR SDRAM SODIMM MT9VDDT1672H – 128MB MT9VDDT3272H – 256MB MT9VDDT6472H – 512MB For component data sheets, refer to Micron’s Web site: Features • 200-pin, small-outline dual in-line memory module (SODIMM) ...

Page 2

... Part Numbers and Timing Parameters – 256MB Modules Base device: MT46V32M8, Module 2 Part Number Density MT9VDDT3272HG-40B__ 256MB MT9VDDT3272HY-40B__ 256MB MT9VDDT3272HG-335__ 256MB MT9VDDT3272HY-335__ 256MB MT9VDDT3272HG-262__ 256MB MT9VDDT3272HG-265__ 256MB MT9VDDT3272HY-265__ 256MB PDF: 09005aef80804052/Source: 09005aef806e057b DD9C16_32_64x72H.fm - Rev. E 1/08 EN Data Rate (MT/ 2 400 333 266 – 333 266 – ...

Page 3

... ECC, SR) 200-Pin DDR SDRAM SODIMM Table 5: Part Numbers and Timing Parameters – 512MB Modules Base device: MT46V64M8, Module 2 Part Number Density MT9VDDT6472HG-40B__ 512MB MT9VDDT6472HY-40B__ 512MB MT9VDDT6472HG-335__ 512MB MT9VDDT6472HY-335__ 512MB MT9VDDT6472HG-26A__ 512MB MT9VDDT6472HG-265__ 512MB Notes: 1. Data sheets for the base devices can be found on Micron’s Web site. ...

Page 4

ECC, SR) 200-Pin DDR SDRAM SODIMM Pin Assignments and Descriptions Table 6: Pin Assignments 200-Pin SODIMM Front Pin Symbol Pin Symbol Pin 101 REF DQ19 103 SS 5 ...

Page 5

ECC, SR) 200-Pin DDR SDRAM SODIMM Table 7: Pin Descriptions Symbol A0–A12 BA0, BA1 CK0, CK0#, CK1, CK1# CK2, CK2# CKE0 DM0–DM8 RAS#, CAS#, WE# S0# SA0–SA2 SCL CB0–CB7 DQ0–DQ63 DQS0–DQS8 SDA DDSPD ...

Page 6

ECC, SR) 200-Pin DDR SDRAM SODIMM Functional Block Diagrams Figure 3: Functional Block Diagram – Low-Profile Layout S0# DQS0 DM0 DQS1 DM1 DQS2 DM2 DQS3 DM3 DQS8 DM8 BA0, BA1 A0–A11/A12 PDF: 09005aef80804052/Source: 09005aef806e057b DD9C16_32_64x72H.fm - ...

Page 7

ECC, SR) 200-Pin DDR SDRAM SODIMM Figure 4: Functional Block Diagram – Standard Layout S0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 ...

Page 8

... READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and center-aligned with data for WRITEs. DDR SDRAM modules operate from differential clock inputs (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. ...

Page 9

... Simulations are significantly more accurate and realistic than a gross estimation of module capacitance when inductance and delay parameters associated with trace lengths are used in simulations. JEDEC modules are currently designed using simulations to close timing budgets. Component AC Timing and Operating Conditions Recommended AC operating conditions are given in the DDR component data sheets. Component specifications are available on Micron’ ...

Page 10

ECC, SR) 200-Pin DDR SDRAM SODIMM I Specifications DD Table 10: I Specifications and Conditions – 128MB DD Values are shown for the MT46V16M8 DDR SDRAM only and are computed from values specified in the 128Mb ...

Page 11

ECC, SR) 200-Pin DDR SDRAM SODIMM Table 11: I Specifications and Conditions – 256MB DD Values are shown for the MT46V32M8 DDR SDRAM only and are computed from values specified in the 256Mb (32 Meg x ...

Page 12

ECC, SR) 200-Pin DDR SDRAM SODIMM Table 12: I Specifications and Conditions – 512MB DD Values are shown for MT46V64M8 DDR SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) ...

Page 13

ECC, SR) 200-Pin DDR SDRAM SODIMM Serial Presence-Detect Table 13: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage: ...

Page 14

ECC, SR) 200-Pin DDR SDRAM SODIMM Module Dimensions Figure 5: 200-Pin SODIMM – Low-Profile Layout 2.0 (0.079) R (2X) U1 1.8 (0.071) (2X) 6.0 (0.236) TYP 2.44 (0.096) TYP 2.0 (0.079) TYP 0.99 (0.039) U6 Pin ...

Page 15

Figure 6: 200-Pin SODIMM – Standard Layout U1 2.0 (0.079) R (2X) 1.8 (0.071) (2X) 6.0 (0.236) TYP 2.44 (0.096) TYP 2.0 (0.079) TYP 0.99 (0.039) U6 Pin 200 Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical ...

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