MT9VDDT3272HG-335G2 Micron Technology Inc, MT9VDDT3272HG-335G2 Datasheet - Page 9

• Manufacturer Part Number: MT9VDDT3272HG-335G2
• Description: MODULE DDR SDRAM 256MB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9VDDT3272HG-335G2

• Memory Type: DDR SDRAM
• Memory Size: 256MB
• Speed: 167MHz
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1135

Electrical Specifications
Table 8:
Input Capacitance
Component AC Timing and Operating Conditions
Table 9:
PDF: 09005aef80804052/Source: 09005aef806e057b
DD9C16_32_64x72H.fm - Rev. E 1/08 EN
V
Symbol
IN
V
, V
I
T
OZ
DD
I
A
I
OUT
Absolute Maximum Ratings
Module and Component Speed Grades
DDR components meet or exceed the listed module speed grades
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
test = 0V)
Output leakage current; 0V ≤ V
disabled
DRAM ambient operating temperature
REF
DD
Module Speed Grade
supply voltage relative to V
Notes:
input 0V ≤ V
-26A
Stresses greater than those listed in Table 8 may cause permanent damage to the
module. This is a stress rating only, and functional operation of the module at these or
any other conditions outside those indicated on the device data sheet is not implied.
Exposure to absolute maximum rating conditions for extended periods may adversely
affect reliability.
1. For further information, refer to technical note
Micron encourages designers to simulate the performance of the module to achieve
optimum values. Simulations are significantly more accurate and realistic than a gross
estimation of module capacitance when inductance and delay parameters associated
with trace lengths are used in simulations. JEDEC modules are currently designed using
simulations to close timing budgets.
Recommended AC operating conditions are given in the DDR component data sheets.
Component specifications are available on Micron’s Web site. Module speed grades
correlate with component speed grades, as shown in Table 9.
-40B
-335
-262
-265
128MB, 256MB, 512MB (x72, ECC, SR) 200-Pin DDR SDRAM SODIMM
on Micron’s Web site.
IN
≤ 1.35V (All other pins not under
OUT
SS
SS
≤ V
DD
1
IN
Q; DQ are
≤ V
DD
9
;
Address inputs,
RAS#, CAS#, WE#, BA,
S#, CKE
CK, CK#
DM
DQ, DQS
Commercial
Industrial
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Component Speed Grade
TN-00-08: “Thermal Applications,”
Electrical Specifications
-75E
-75Z
-75
-5
-6
Min
–1.0
–0.5
–40
–18
©2004 Micron Technology, Inc. All rights reserved
–6
–2
–5
0
Max
+3.6
+3.2
+70
+85
+18
+6
+2
+5
available
Units
µA
µA
°C
°C
V
V