MT8VDDT6432UY-5K1 Micron Technology Inc, MT8VDDT6432UY-5K1 Datasheet - Page 32

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MT8VDDT6432UY-5K1

Manufacturer Part Number
MT8VDDT6432UY-5K1
Description
MODULE DDR 256MB 100-DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT8VDDT6432UY-5K1

Memory Type
DDR SDRAM
Memory Size
256MB
Speed
400MT/s
Package / Case
100-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 16:
Table 17:
Figure 14:
pdf: 09005aef80745603, source: 09005aef807455eb
DD8C32_64_128x32UG_2.fm - Rev. G 5/05 EN
SDA OUT
Mode
Memory Area Select Code (two arrays)
Protection Register Select Code
Current Address Read
Random Address Read
Sequential Read
Byte Write
Page Write
SDA IN
SCL
EEPROM Device Select Code
The most significant bit (b7) is sent first
EEPROM Operating Modes
SPD EEPROM Timing Diagram
t SU:STA
RW Bit
1
0
1
1
0
0
t F
t HD:STA
V
V
V
V
IH
IH
IH
IH
t LOW
t AA
WC
V
V
or V
or V
or V
or V
IL
IL
128MB, 256MB, 512MB: (x32, DR) 100-Pin DDR UDIMM
IL
IL
IL
IL
b7
t HIGH
1
0
t HD:DAT
Bytes
Device Type Identifier
≤ 16
≥ 1
1
1
1
1
32
b6
0
1
Initial Sequence
START, Device Select, RW = ‘1’
START, Device Select, RW = ‘0’, Address
reSTART, Device Select, RW = ‘1’
Similar to Current or Random Address Read
START, Device Select, RW = ‘0’
START, Device Select, RW = ‘0’
t DH
t R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
b5
1
1
t SU:DAT
b4
0
0
SA2
SA2
b3
Serial Presence Detect
©2004, 2005 Micron Technology, Inc. All rights reserved.
Chip Enable
SA1
SA1
b2
t SU:STO
t BUF
SA0
SA0
b1
UNDEFINED
RW
RW
RW
b0

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