ST10F272Z2Q3 STMicroelectronics, ST10F272Z2Q3 Datasheet - Page 138

MCU 16BIT 256KB FLASH 144-PQFP

ST10F272Z2Q3

Manufacturer Part Number
ST10F272Z2Q3
Description
MCU 16BIT 256KB FLASH 144-PQFP
Manufacturer
STMicroelectronics
Series
ST10r
Datasheet

Specifications of ST10F272Z2Q3

Core Processor
ST10
Core Size
16-Bit
Speed
64MHz
Connectivity
ASC, CAN, EBI/EMI, I²C, SSC, UART/USART
Peripherals
POR, PWM, WDT
Number Of I /o
111
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
20K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 24x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
144-QFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
497-5579

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ST10F272Z2Q3
Manufacturer:
E-CMOS
Quantity:
10 000
Part Number:
ST10F272Z2Q3
Manufacturer:
STMicroelectronics
Quantity:
10 000
Electrical characteristics
25.2
Table 62.
1. The value of the V
2. For details on operating conditions concerning the usage of A/D Converter refer to
25.3
138/189
limit (up to 6.0 Volt) for a maximum of 100 hours over the global 300000 hours, representing the lifetime of the device
(about 30 years). On the other hand, it is possible to exceed the lower limit (down to 4.0 Volt) whenever RTC and 32kHz
on-chip oscillator amplifier are turned off (only Stand-by RAM powered through VSTBY pin in Stand-by mode). When
VSTBY voltage is lower than main VDD, the input section of VSTBY/EA pin can generate a spurious static consumption on
VDD power supply (in the range of tenth of µA).
Symbol
V
V
V
AREF
STBY
T
T
DD
A
J
Recommended operating conditions
Recommended operating conditions
Power considerations
The average chip-junction temperature, T
following equation:
T
Where:
T
Θ
P
P
P
Most of the time for the applications P
P
and/or memories.
An approximate relationship between P
P
Therefore (solving equations 1 and 2):
K = P
Where:
K is a constant for the particular part, which may be determined from equation (3) by
measuring P
may be obtained by solving equations (1) and (2) iteratively for any value of T
A
J
D
INT
I/O
I/O
D
JA
Operating supply voltage
Operating stand-by supply voltage
Operating analog reference voltage
Ambient temperature under bias
Junction temperature under bias
= T
is the Ambient Temperature in °C,
is the sum of P
= K / (T
is the Package Junction-to-Ambient Thermal Resistance, in °C/W,
represents the Power Dissipation on Input and Output Pins; User Determined.
may be significant if the device is configured to drive continuously external modules
is the product of I
STBY
D
A
x (T
+ (P
voltage is specified in the range 4.5 - 5.5 Volt. Nevertheless, it is acceptable to exceed the upper
J
A
D
+ 273°C) (2)
D
+ 273°C) + Θ
x Θ
(at equilibrium) for a known T
JA
INT
) (1)
and P
DD
Parameter
and V
JA
I/O
x P
(P
DD
D
D
(1)
2
, expressed in Watt. This is the Chip Internal Power,
(2)
= P
(3)
I/O
INT
D
< P
J
and T
, in degrees Celsius, may be calculated using the
+ P
A.
INT
I/O
Using this value of K, the values of P
J
and may be neglected. On the other hand,
),
(if P
I/O
is neglected) is given by:
Section
25.7.
Min
-40
-40
4.5
4.5
Value
+125
+150
Max
5.5
5.5
A
.
ST10F272Z2
D
and T
Unit
°C
°C
V
V
J

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