MC9S08QA4CDNE Freescale Semiconductor, MC9S08QA4CDNE Datasheet - Page 6

• Manufacturer Part Number: MC9S08QA4CDNE
• Description: IC MCU 8BIT 4K FLASH 8-SOIC
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08QA4CDNE

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 20MHz
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 4
• Program Memory Size: 4KB (4K x 8)
• Program Memory Type: FLASH
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Processor Series: S08QA
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: I2C, SCI, SPI
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 4
• Number Of Timers: 1
• Operating Supply Voltage: 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08QA4
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 4-ch x 10-bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Connectivity: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Characteristics
The average chip-junction temperature (T
where:
For most applications, P
is:
Solving
where K is a constant pertaining to the particular part. K can be determined from
for a known T
for any value of T
3.4
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early CMOS circuits,
normal handling precautions should be used to avoid exposure to static discharge. Qualification tests are performed to ensure
that these devices can withstand exposure to reasonable levels of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. During
the device qualification ESD stresses were performed for the human body model (HBM), the machine model (MM) and the
charge device model (CDM).
6
Equation 1
— T
— θ
— P
— P
— P
ESD Protection and Latch-Up Immunity
A
A
JA
D
int
I/O
. Using this value of K, the values of P
= Ambient temperature, °C
= P
= Package thermal resistance, junction-to-ambient, °C/W
= I
A
= Power dissipation on input and output pins — user-determined
.
and
int
DD
Operating temperature range
(packaged)
Thermal resistance
Thermal resistance
+ P
× V
Single-layer board
Four-layer board
I/O
Equation 2
I/O
<< P
DD
, Watts — chip internal power
8-pin PDIP
8-pin NB SOIC
8-pin DFN
8-pin PDIP
8-pin NB SOIC
8-pin DFN
int
and can be neglected. An approximate relationship between P
for K gives:
Rating
K = P
MC9S08QA4 Series MCU Data Sheet, Rev. 3
J
) in °C can be obtained from:
Table 3. Thermal Characteristics
D
P
T
× (T
D
J
= K ÷ (T
= T
A
D
+ 273°C) + θ
and T
A
+ (P
J
J
+ 273°C)
can be obtained by solving
D
Symbol
× θ
θ
θ
T
JA
JA
JA
A
JA
)
× (P
D
)
2
Equation 3
–40 to 85
T
Value
L
113
150
179
72
87
41
to T
H
Equation 1
by measuring P
D
and T
°C/W
°C/W
Unit
and
°C
Freescale Semiconductor
J
Equation 2
(if P
D
I/O
(at equilibrium)
is neglected)
iteratively
Eqn. 1
Eqn. 2
Eqn. 3