MC9S08QA4CDNE Freescale Semiconductor, MC9S08QA4CDNE Datasheet - Page 7

• Manufacturer Part Number: MC9S08QA4CDNE
• Description: IC MCU 8BIT 4K FLASH 8-SOIC
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08QA4CDNE

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 20MHz
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 4
• Program Memory Size: 4KB (4K x 8)
• Program Memory Type: FLASH
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Processor Series: S08QA
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: I2C, SCI, SPI
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 4
• Number Of Timers: 1
• Operating Supply Voltage: 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08QA4
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 4-ch x 10-bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Connectivity: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete
DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
3.5
This section includes information about power supply requirements and I/O pin characteristics.
Freescale Semiconductor
Supply voltage (run, wait, and stop modes)
Minimum RAM retention supply voltage applied to V
Low-voltage detection threshold
Low-voltage warning threshold
DC Characteristics
1
Latch-up
Machine
Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
Human
Model
Body
No.
1
2
3
4
Table 6. DC Characteristics (Temperature Range = –40 to 85°C Ambient)
Parameter
Series resistance
Storage capacitance
Number of pulses per pin
Series resistance
Storage capacitance
Number of pulses per pin
Minimum input voltage limit
Maximum input voltage limit
Human body model (HBM)
Machine model (MM)
Charge device model (CDM)
Latch-up current at T
Table 5. ESD and Latch-Up Protection Characteristics
Table 4. ESD and Latch-up Test Conditions
Description
MC9S08QA4 Series MCU Data Sheet, Rev. 3
Rating
1
A
(V
(V
(V
= 85°C
(V
(V
DD
DD
DD
DD
DD
DD
falling)
falling)
falling)
rising)
rising)
Symbol
Symbol
Symbol
V
V
V
V
V
V
V
I
RAM
R1
R1
LVW
HBM
CDM
LAT
LVD
C
C
MM
DD
(rising)
V
±2000
V
±200
±500
±100
1.80
1.88
2.08
Min
Min
por
1.8
LVDL
1,2
Value
1500
–2.5
100
200
7.5
3
0
3
Typical
Max
1.82
1.90
2.1
—
—
—
—
—
—
—
Electrical Characteristics
Unit
Unit
mA
pF
pF
Ω
Ω
V
V
V
V
V
Max
1.91
1.99
3.6
3.6
2.2
—
Unit
V
V
V
V
7