MC908JK3EMDWER Freescale Semiconductor, MC908JK3EMDWER Datasheet - Page 30

• Manufacturer Part Number: MC908JK3EMDWER
• Description: MCU 8BIT 128RAM 4K FLASH 20-SOIC
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908JK3EMDWER

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Peripherals: LED, LVD, POR, PWM
• Number Of I /o: 15
• Program Memory Size: 4KB (4K x 8)
• Program Memory Type: FLASH
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 12x8b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 20-SOIC (7.5mm Width)
• Processor Series: HC08JK
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 128 B
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 15
• Number Of Timers: 2
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, DEMO908JL16E, M68CBL05CE
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8 bit, 12 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Connectivity: -
• Lead Free Status / Rohs Status: Details

Memory
2.8 Flash Page Erase Operation
Use the following procedure to erase a page of Flash memory. A page consists of 64 consecutive bytes
starting from addresses $XX00, $XX40, $XX80 or $XXC0. The 48-byte user interrupt vectors area also
forms a page. Any page within the 4K bytes user memory area ($EC00–$FBFF) can be erased alone.
The 48-byte user interrupt vectors cannot be erased by the page erase operation because of security
reasons. Mass erase is required to erase this page.
2.9 Flash Mass Erase Operation
Use the following procedure to erase the entire Flash memory:
30
1. Set the ERASE bit and clear the MASS bit in the Flash Control Register.
2. Write any data to any Flash address within the page address range desired.
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time t
6. Clear the ERASE bit.
7. Wait for a time, t
8. Clear the HVEN bit.
9. After time, t
1. Set both the ERASE bit and the MASS bit in the Flash Control Register.
2. Write any data to any Flash location within the Flash memory address range.
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time t
6. Clear the ERASE bit.
7. Wait for a time, t
8. Clear the HVEN bit.
9. After time, t
Programming and erasing of Flash locations cannot be performed by code
being executed from the Flash memory. While these operations must be
performed in the order as shown, but other unrelated operations may occur
between the steps.
Programming and erasing of Flash locations cannot be performed by code
being executed from the Flash memory. While these operations must be
performed in the order as shown, but other unrelated operations may occur
between the steps.
rcv
rcv
(1μs)
(1μs)
Erase
MErase
nvs
nvh
nvs
nvh1
(10μs).
,
(10μs).
,
(5μs).
the memory can be accessed in read mode again.
the memory can be accessed in read mode again.
(100μs).
(1ms).
(4ms).
MC68HC908JL3E Family Data Sheet, Rev. 4
NOTE
NOTE
Freescale Semiconductor