IC M16C MCU FLASH 64K 100-QFP

M30622F8PFP#D5C

Manufacturer Part NumberM30622F8PFP#D5C
DescriptionIC M16C MCU FLASH 64K 100-QFP
ManufacturerRenesas Electronics America
SeriesM16C™ M16C/60
M30622F8PFP#D5C datasheet
 

Specifications of M30622F8PFP#D5C

Core ProcessorM16C/60Core Size16-Bit
Speed24MHzConnectivityI²C, IEBus, UART/USART
PeripheralsDMA, WDTNumber Of I /o85
Program Memory Size64KB (64K x 8)Program Memory TypeFLASH
Ram Size4K x 8Voltage - Supply (vcc/vdd)2.7 V ~ 5.5 V
Data ConvertersA/D 26x10b; D/A 2x8bOscillator TypeInternal
Operating Temperature-20°C ~ 85°CPackage / Case100-QFP
Lead Free Status / RoHS StatusContains lead / RoHS non-compliantEeprom Size-
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M16C/62P Group (M16C/62P, M16C/62PT)
Table 5.53
Flash Memory Version Electrical Characteristics
Symbol
Program and Erase Endurance
Word Program Time (V
Lock Bit Program Time
Block Erase Time
=5.0V )
(V
CC1
Erase All Unlocked Blocks Time
t
Flash Memory Circuit Stabilization Wait Time
PS
(5)
Data Hold Time
Table 5.54
Flash Memory Version Electrical Characteristics
(Block A and Block 1
Symbol
Program and Erase Endurance
Word Program Time (V
Lock Bit Program Time
Block Erase Time
=5.0V )
(V
CC1
t
Flash Memory Circuit Stabilization Wait Time
PS
(5)
Data Hold Time
NOTES:
1. Referenced to V
=4.5 to 5.5V at T
CC1
2. n denotes the number of block erases.
3. Program and Erase Endurance refers to the number of times a block erase can be performed.
If the program and erase endurance is n (n=100, 1,000, or 10,000), each block can be erased n times.
For example, if a 4 Kbytes block A is erased after writing 1 word data 2,048 times, each to a different address, this counts as
one program and erase endurance. Data cannot be written to the same address more than once without erasing the block.
(Rewrite prohibited)
4. Maximum number of E/W cycles for which operation is guaranteed.
5. Ta (ambient temperature)=55 ° C. As to the data hold time except Ta=55 ° C, please contact Renesas Technology Corp. or an
authorized Renesas Technology Corp. product distributor.
6. Referenced to V
= 4.5 to 5.5V at T
CC1
otherwise specified.
7. Table 5.54 applies for block A or block 1 program and erase endurance > 1,000. Otherwise, use Table 5.53.
8. To reduce the number of program and erase endurance when working with systems requiring numerous rewrites, write to
unused word addresses within the block instead of rewrite. Erase block only after all possible addresses are used. For
example, an 8-word program can be written 256 times maximum before erase becomes necessary.
Maintaining an equal number of erasure between block A and block 1 will also improve efficiency. It is important to track the
total number of times erasure is used.
9. Should erase error occur during block erase, attempt to execute clear status register command, then block erase command
at least three times until erase error disappears.
10. Set the PM17 bit in the PM1 register to “1” (wait state) when executing more than 100 times rewrites (B7 and U7).
11. Customers desiring E/W failure rate information should contact their Renesas technical support representative.
Table 5.55
Flash Memory Version Program/Erase Voltage and Read Operation Voltage
Characteristics (at T
to 125 °C (B7, U7 (V version))
Flash Program, Erase Voltage
V
= 5.0 V ± 0.5 V
CC1
Rev.2.41
Jan 10, 2006
Page 85 of 96
REJ03B0001-0241
Parameter
(3)
=5.0V )
CC1
4-Kbyte block
8-Kbyte block
32-Kbyte block
64-Kbyte block
(2)
(7)
)
Parameter
(3, 8, 9)
1=5.0V )
CC
4-Kbyte block
= 0 to 60 ° C unless otherwise specified.
opr
= − 40 to 85 ° C (B7, U7 (T version)) / − 40 to 125 ° C (B7, U7 (V version)) unless
opr
= 0 to 60 °C(B, U), Topr = −40 to 85 °C (B7, U7 (T version)) / −40
opr
Flash Read Operation Voltage
V
=4.0 to 5.5 V
CC1
5. Electrical Characteristics
for 100 cycle products (B, U)
(1)
Standard
Min.
Typ.
Max.
100
25
200
25
200
4
0.3
4
0.3
4
0.5
4
0.8
4
4×n
15
20
(6)
for 10,000 cycle products (B7, U7)
Standard
Min.
Typ.
Max.
(4)
10,000
25
25
4
0.3
15
20
Unit
cycle
µ s
µ s
s
s
s
s
s
µ s
year
Unit
cycle
µ s
µ s
s
µ s
year