EL5427CR Intersil, EL5427CR Datasheet - Page 11

• Manufacturer Part Number: EL5427CR
• Description: IC BUFFER LP 12CH 2.5MHZ 28TSSOP
• Manufacturer: Intersil

Specifications of EL5427CR

• Amplifier Type: Buffer
• Number Of Circuits: 12
• Output Type: Rail-to-Rail
• Slew Rate: 2.2 V/µs
• -3db Bandwidth: 2.5MHz
• Current - Input Bias: 2nA
• Voltage - Input Offset: 1000µV
• Current - Supply: 1.6mA
• Current - Output / Channel: 120mA
• Voltage - Supply, Single/dual (±): 4.5 V ~ 16.5 V, ±2.25 V ~ 8.25 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 28-TSSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gain Bandwidth Product: -

Typical Performance Curves
Applications Information
Product Description
The EL5127, EL5227, EL5327, and EL5427 unity gain
buffers are fabricated using a high voltage CMOS process. It
exhibits rail-to-rail input and output capability and has low
power consumption (120µA per buffer). These features
make the EL5127, EL5227, EL5327, and EL5427 ideal for a
wide range of general-purpose applications. When driving a
load of 10kΩ and 12pF, the EL5127, EL5227, EL5327, and
EL5427 have a -3dB bandwidth of 2.5MHz and exhibits
2.2V/µs slew rate.
Operating Voltage, Input, and Output
The EL5127, EL5227, EL5327, and EL5427 are specified
with a single nominal supply voltage from 5V to 15V or a split
supply with its total range from 5V to 15V. Correct operation
is guaranteed for a supply range of 4.5V to 16.5V. Most
EL5127, EL5227, EL5327, and EL5427 specifications are
stable over both the full supply range and operating
FIGURE 19. PACKAGE POWER DISSIPATION vs AMBIENT
1.4
1.2
0.8
0.6
0.4
0.2
1
0
0
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
TEMPERATURE
1.111W
θ
JA
TSSOP28
=75°C/W
25
AMBIENT TEMPERATURE (°C)
θ
TSSOP20
JA
1.333W
50
=90°C/W
11
FIGURE 21. PACKAGE POWER DISSIPATION vs AMBIENT TEMPERATURE
1.176W
75
θ
85
JA
TSSOP24
EL5127, EL5227, EL5327, EL5427
=85°C/W
100
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
714mW
θ
125
JA
TSSOP24
=128°C/W
25
AMBIENT TEMPERATURE (°C)
833mW
θ
JA
TSSOP20
50
=140°C/W
781mW
temperatures of -40°C to +85°C. Parameter variations with
operating voltage and/or temperature are shown in the
typical performance curves.
The output swings of the EL5127, EL5227, EL5327, and
EL5427 typically extend to within 80mV of positive and
negative supply rails with load currents of 5mA. Decreasing
load currents will extend the output voltage range even
closer to the supply rails. Figure 22 shows the input and
output waveforms for the device. Operation is from ±5V
supply with a 10kΩ load connected to GND. The input is a
10V
9.985V
75
FIGURE 20. PACKAGE POWER DISSIPATION vs AMBIENT
θ
JA
TSSOP28
P-P
85
=120°C/W
P-P
sinusoid. The output voltage is approximately
100
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
.
0
0
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
TEMPERATURE
714mW
486mW
125
θ
25
JA
AMBIENT TEMPERATURE (°C)
MSOP10
=206°C/W
50
758mW
θ
JA
75
QFN32
=132°C/W
85
θ
100
JA
QFN24
=140°C/W
125
150
May 4, 2007
FN7111.4