MW7IC2220GNR1 Freescale Semiconductor, MW7IC2220GNR1 Datasheet

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MW7IC2220GNR1

Manufacturer Part Number
MW7IC2220GNR1
Description
IC PWR AMP RF 2170MHZ TO-270-16
Manufacturer
Freescale Semiconductor
Type
Power Amplifierr
Datasheet

Specifications of MW7IC2220GNR1

Current - Supply
300mA
Frequency
2.11GHz ~ 2.17GHz
Gain
31dB
P1db
20W
Package / Case
TO-270-16
Rf Type
W-CDMA
Test Frequency
2.14GHz
Voltage - Supply
28V
Number Of Channels
1
Frequency (max)
2.17GHz
Power Supply Requirement
Single
Single Supply Voltage (typ)
28V
Single Supply Voltage (max)
32V
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (typ)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Pin Count
16
Mounting
Surface Mount
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MW7IC2220GNR1
Manufacturer:
FREESCALE
Quantity:
1 400
Part Number:
MW7IC2220GNR1
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2008 - 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
matching that makes it usable from 2000 to 2200 MHz. This multi - stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation formats including TD - SCDMA.
• Typical Single - Carrier W - CDMA Performance: V
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 20 Watts CW
• Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 5 Watts
• Typical P
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
The MW7IC2220N wideband integrated circuit is designed with on - chip
I
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Output Power
CW P
and Common Source S - Parameters
Enable/Disable Function
DQ2
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
Power Gain — 31 dB
Power Added Efficiency — 13%
ACPR @ 5 MHz Offset — - 50 dBc in 3.84 MHz Bandwidth
V
V
V
V
RF
GS1
GS2
DS1
DS1
= 300 mA, P
out
in
.
out
@ 1 dB Compression Point ' 20 Watts CW
out
Figure 1. Functional Block Diagram
= 2 Watts Avg., Full Frequency Band, Channel
(1)
Temperature Compensation
Quiescent Current
(1)
DD
= 28 Volts, I
DQ1
RF
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
= 80 mA,
out
/V
DS2
Note: Exposed backside of the package is
INTEGRATED POWER AMPLIFIERS
MW7IC2220NBR1
Document Number: MW7IC2220N
MW7IC2220NR1
TO - 270 WB - 16
TO - 272 WB - 16
CASE 1886 - 01
CASE 1329 - 09
2110 - 2170 MHz, 2 W Avg., 28 V
MW7IC2220GNR1
MW7IC2220NBR1
PLASTIC
PLASTIC
MW7IC2220NR1
V
V
GND
V
V
GND
RF
Figure 2. Pin Connections
the source terminal for the transistors.
GS1
GS2
DS1
DS1
NC
NC
NC
NC
RF LDMOS WIDEBAND
in
SINGLE W - CDMA
10
11
1
2
3
4
5
6
7
8
9
(Top View)
TO - 270 WB - 16 GULL
MW7IC2220GNR1
CASE 1887 - 01
16
15
14
13
12
PLASTIC
Rev. 1, 1/2009
GND
NC
RF
NC
GND
out
/V
DS2
1

Related parts for MW7IC2220GNR1

MW7IC2220GNR1 Summary of contents

Page 1

... INTEGRATED POWER AMPLIFIERS CASE 1886 - 270 MW7IC2220NR1 CASE 1329 - 272 MW7IC2220NBR1 RF /V out DS2 (1) Note: Exposed backside of the package is MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 Rev. 1, 1/2009 MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 2110 - 2170 MHz Avg SINGLE W - CDMA RF LDMOS WIDEBAND PLASTIC CASE 1887 - 270 GULL PLASTIC MW7IC2220GNR1 ...

Page 2

... Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 2 Stage 1, 28 Vdc DQ1 ...

Page 3

... PAE ACPR IRL = 28 Vdc DQ1 P1dB IMD sym VBW res = 2 W Avg. G out F Φ Delay = 20 W CW, ΔΦ out ΔG ΔP1dB MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 Min Typ Max — — 10 — — 1 — — 1 1.2 2 2.7 — 2.7 — 12.5 0.2 0.39 1.2 — ...

Page 4

... C17, C22 0.1 μF, 250 V Chip Capacitors C18, C23 6.8 μ Chip Capacitors C19, C24 4.7 μ Chip Capacitors C20, C25 10 μ Chip Capacitors C26 470 μ Electrolytic Capacitor R1 KΩ, 1/4 W Chip Resistors MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 4 DUT 16 C16 15 Z13 C11 C12 ...

Page 5

... C1 C5 MW7IC2220N Rev GG1 Figure 4. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Layout RF Device Data Freescale Semiconductor C9 C10 MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 C26 C16 C17 C18 C19 C20 C11 C13 C15 C12 C14 C23 C24 C25 C22 C21 5 ...

Page 6

... Vdc DQ1 f = 2140 MHz OUTPUT POWER (WATTS) CW out Figure 7. Power Gain versus Output Power @ DQ1 MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 6 TYPICAL CHARACTERISTICS Vdc (Avg.), mA out DQ1 DQ2 Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7 0.01% Probability on CCDF ps IRL ACPR ...

Page 7

... Vdc 300 mA 2140 MHz DQ2 Single−Carrier W−CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 7 0.01% Probability on CCDF OUTPUT POWER (WATTS) AVG. out Efficiency and ACPR versus Output Power MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 100 − −30 −35 30 −40 25 −45 20 −50 15 −55 ...

Page 8

... W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) Figure 14. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 8 TYPICAL CHARACTERISTICS − − − ...

Page 9

... Z = Device input impedance as measured from in gate to ground Test circuit impedance as measured load from drain to ground. Output Device Matching Under Test Network load MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 f = 2060 MHz Avg. 9 ...

Page 10

... MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 mA 420 mA DQ1 DQ2 ∠ φ 0.356 7.81 0.001 0.757 - 7.8 0.000 1.430 - 31 ...

Page 11

... MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 (continued) = 25°C, 50 Ohm System ∠ φ ∠ φ 81.1 0.954 155 - 82 0.946 154 - 85.9 0.941 153 - 96 ...

Page 12

... INPUT POWER (dBm) in NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Z source Ω P1dB 40.41 + j2.31 Figure 17. Pulsed CW Output Power versus Input Power @ 2110 MHz MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 Ideal 50 P1dB = 46.99 dBm ( ...

Page 13

... Microstrip Z9 0.323″ x 0.083″ Microstrip Z10 0.364″ x 0.083″ Microstrip Z11, Z12 0.564″ x 0.083″ Microstrip PCB Arlon CuClad 250GX - 0300- 55- 22, 0.030″, ε Description MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 + C23 V DD2 C13 C14 C15 C16 C17 ...

Page 14

... C1 C5 MW7IC2220N Rev GG1 Figure 20. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Layout — SCDMA MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 14 C9 C10 C23 C13 C14 C15 C16 C17 C12 C11 C20 C21 C22 C19 C18 RF Device Data Freescale Semiconductor ...

Page 15

... MHz BW 1.28 MHz BW −3.2 MHz Offset +3.2 MHz Offset −ALT1 in +ALT1 in 1.28 MHz BW 1.28 MHz BW −1.6 MHz Offset +1.6 MHz Offset 2.5 MHz f, FREQUENCY (MHz) Figure 22 Carrier TD - SCDMA Spectrum MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 Adj−U 15 Alt− Span 25 MHz 15 ...

Page 16

... Z o Figure 23. Series Equivalent Input and Load Impedance — SCDMA MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 2070 MHz f = 1950 MHz Z load Vdc 190 mA 300 mA DD DQ1 DQ2 load MHz W W 1950 15.539 - j10.702 1960 14.953 - j10.522 1970 14.373 - j10.327 1980 13.837 - j10.120 1990 ...

Page 17

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 17 ...

Page 18

... MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 18 RF Device Data Freescale Semiconductor ...

Page 19

... RF Device Data Freescale Semiconductor MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 19 ...

Page 20

... MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 20 RF Device Data Freescale Semiconductor ...

Page 21

... RF Device Data Freescale Semiconductor MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 21 ...

Page 22

... MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 22 RF Device Data Freescale Semiconductor ...

Page 23

... RF Device Data Freescale Semiconductor MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 23 ...

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... MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 24 RF Device Data Freescale Semiconductor ...

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... RF Device Data Freescale Semiconductor MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 25 ...

Page 26

... EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Sept. 2008 • Initial Release of Data Sheet 1 Jan. 2009 • Added Fig. 13, MTTF versus Junction Temperature MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 26 PRODUCT DOCUMENTATION REVISION HISTORY Description RF Device Data Freescale Semiconductor ...

Page 27

... Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008 - 2009. All rights reserved. MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 27 ...

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