MW7IC2220GNR1 Freescale Semiconductor, MW7IC2220GNR1 Datasheet - Page 2

• Manufacturer Part Number: MW7IC2220GNR1
• Description: IC PWR AMP RF 2170MHZ TO-270-16
• Manufacturer: Freescale Semiconductor
• Type: Power Amplifierr

Specifications of MW7IC2220GNR1

• Current - Supply: 300mA
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 31dB
• P1db: 20W
• Package / Case: TO-270-16
• Rf Type: W-CDMA
• Test Frequency: 2.14GHz
• Voltage - Supply: 28V
• Number Of Channels: 1
• Frequency (max): 2.17GHz
• Power Supply Requirement: Single
• Single Supply Voltage (typ): 28V
• Single Supply Voltage (max): 32V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Pin Count: 16
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

2
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Stage 1 — Off Characteristics
Stage 1 — On Characteristics
Drain- Source Voltage
Gate- Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Input Power
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Fixture Gate Quiescent Voltage
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
2 W Avg.
(P
20 W Avg.
(P
(V
(V
(V
(V
(V
(V
calculators by product.
Select Documentation/Application Notes - AN1955.
out
out
DS
DS
GS
DS
DS
DD
= 2 W Avg., Case Temperature = 78°C)
= 20 W Avg., Case Temperature = 82°C)
= 65 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc, I
DS
D
DQ1
DQ1
GS
GS
= 23 μAdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 80 mAdc)
= 80 mAdc, Measured in Functional Test)
Test Methodology
Characteristic
Test Methodology
(1,2)
Characteristic
Rating
(T
C
= 25°C unless otherwise noted)
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
DQ1
DQ2
DQ1
DQ2
= 80 mA
= 300 mA
= 80 mA
= 300 mA
Symbol
Rating
V
V
V
I
I
I
GG(Q)
GS(th)
GS(Q)
GSS
DSS
DSS
3
Symbol
Symbol
V
R
V
V
T
Min
T
P
Package Peak Temperature
1.2
9.5
DSS
T
—
—
—
—
stg
θJC
GS
DD
C
in
J
1B (Minimum)
III (Minimum)
A (Minimum)
12.2
260
Typ
2.8
—
—
—
2
Class
- 65 to +150
Value
- 0.5, +65
- 0.5, +5
32, +0
Value
Freescale Semiconductor
1.25
150
225
4.3
1.5
4.3
20
(2,3)
Max
16.5
2.7
10
—
1
1
RF Device Data
(continued)
°C/W
Unit
dBm
Unit
μAdc
μAdc
μAdc
Vdc
Vdc
Vdc
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
°C