MW7IC2220GNR1 Freescale Semiconductor, MW7IC2220GNR1 Datasheet - Page 8

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MW7IC2220GNR1

Manufacturer Part Number
MW7IC2220GNR1
Description
IC PWR AMP RF 2170MHZ TO-270-16
Manufacturer
Freescale Semiconductor
Type
Power Amplifierr
Datasheet

Specifications of MW7IC2220GNR1

Current - Supply
300mA
Frequency
2.11GHz ~ 2.17GHz
Gain
31dB
P1db
20W
Package / Case
TO-270-16
Rf Type
W-CDMA
Test Frequency
2.14GHz
Voltage - Supply
28V
Number Of Channels
1
Frequency (max)
2.17GHz
Power Supply Requirement
Single
Single Supply Voltage (typ)
28V
Single Supply Voltage (max)
32V
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (typ)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Pin Count
16
Mounting
Surface Mount
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MW7IC2220GNR1
Manufacturer:
FREESCALE
Quantity:
1 400
Part Number:
MW7IC2220GNR1
Manufacturer:
FREESCALE
Quantity:
20 000
8
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
36
30
24
18
12
0.0001
6
0.001
1600
0.01
100
0.1
10
1
64 DPCH, 50% Clipping, Single - Carrier Test Signal
Figure 12. Broadband Frequency Response
0
Figure 14. CCDF W - CDMA 3GPP, Test Model 1,
1750
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
V
I
DQ1
DD
1900
= 28 Vdc
= 80 mA, I
2
2050
f, FREQUENCY (MHz)
PEAK−TO−AVERAGE (dB)
DQ2
S11
S21
= 300 mA
4
2200
2350
6
2500
Input Signal
TYPICAL CHARACTERISTICS
W - CDMA TEST SIGNAL
2650
8
2800
0
−5
−10
−15
−20
−25
10
−100
−110
−10
−20
−30
−40
−50
−60
−70
−80
−90
10
10
10
10
10
9
8
7
6
5
90
−9
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 15. Single - Carrier W - CDMA Spectrum
−7.2
110
−ACPR in 3.84 MHz
Integrated BW
−5.4
130
T
DD
J
1st Stage
, JUNCTION TEMPERATURE (°C)
−3.6
= 28 Vdc, P
f, FREQUENCY (MHz)
150
−1.8
2nd Stage
Channel BW
3.84 MHz
out
170
= 2 W Avg., and PAE = 13%.
0
Freescale Semiconductor
1.8
190
−ACPR in 3.84 MHz
Integrated BW
3.6
210
RF Device Data
5.4
230
7.2
250
9

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