MW7IC2220GNR1 Freescale Semiconductor, MW7IC2220GNR1 Datasheet - Page 3

• Manufacturer Part Number: MW7IC2220GNR1
• Description: IC PWR AMP RF 2170MHZ TO-270-16
• Manufacturer: Freescale Semiconductor
• Type: Power Amplifierr

Specifications of MW7IC2220GNR1

• Current - Supply: 300mA
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 31dB
• P1db: 20W
• Package / Case: TO-270-16
• Rf Type: W-CDMA
• Test Frequency: 2.14GHz
• Voltage - Supply: 28V
• Number Of Channels: 1
• Frequency (max): 2.17GHz
• Power Supply Requirement: Single
• Single Supply Voltage (typ): 28V
• Single Supply Voltage (max): 32V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Pin Count: 16
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Stage 2 — Off Characteristics
Stage 2 — On Characteristics
Stage 2 — Dynamic Characteristics
Functional Tests (In Freescale Wideband 2110- 2170 MHz Test Fixture, 50 ohm system) V
P
PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
out
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Fixture Gate Quiescent Voltage
Drain- Source On - Voltage
Output Capacitance
Power Gain
Power Added Efficiency
Adjacent Channel Power Ratio
Input Return Loss
P
IMD Symmetry @ 18 W PEP, P
VBW Resonance Point
Gain Flatness in 60 MHz Bandwidth @ P
Average Deviation from Linear Phase in 60 MHz Bandwidth
Average Group Delay @ P
Part - to - Part Insertion Phase Variation @ P
Gain Variation over Temperature
Output Power Variation over Temperature
1. Part internally matched both on input and output.
out
(V
(V
(V
(V
(V
(V
(V
(V
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
@ P
f = 2140 MHz, Six Sigma Window
( - 30°C to +85°C)
( - 30°C to +85°C)
= 2 W Avg., f1 = 2112.5 MHz and f2 = 2167.5 MHz, Single-Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal
DS
DS
GS
DS
DS
DD
GS
DS
@ 1 dB Compression Point, CW
out
= 65 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 20 W CW
DS
`
D
DQ2
DQ2
D
GS
GS
= 150 μAdc)
= 1 Adc)
= 0 Vdc)
30 dBc
= 0 Vdc)
= 0 Vdc)
= 300 mAdc)
= 300 mAdc, Measured in Functional Test)
out
Characteristic
= 20 W CW, f = 2140 MHz
out
where IMD Third Order
(1)
(T
out
C
= 25°C unless otherwise noted) (continued)
out
= 2 W Avg.
GS
= 20 W CW,
= 0 Vdc)
DD
= 28 Vdc, I
Symbol
VBW
V
IMD
V
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
V
V
ΔP1dB
ACPR
Delay
P1dB
I
I
I
DS(on)
C
PAE
GS(th)
GG(Q)
GS(Q)
G
GSS
IRL
DSS
DSS
G
ΔΦ
ΔG
Φ
oss
ps
DQ1
sym
F
res
= 80 mA, I
DD
Min
= 28 Vdc, I
1.2
0.2
29
11
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7
DQ2
= 300 mA, 2110- 2170 MHz
DQ1
0.036
0.003
0.39
Typ
205
- 50
- 14
2.7
0.6
1.2
2.5
31
13
20
40
70
15
—
—
—
2
8
= 80 mA, I
DQ2
Max
12.5
2.7
1.2
- 47
- 12
10
34
—
—
—
—
—
—
—
—
—
—
—
—
1
1
= 300 mA,
dBm/°C
dB/°C
μAdc
μAdc
μAdc
MHz
MHz
Unit
Vdc
Vdc
Vdc
Vdc
dBc
pF
dB
dB
dB
W
ns
%
°
°
3