ATMEGA128RFA1-ZU Atmel, ATMEGA128RFA1-ZU Datasheet - Page 302
ATMEGA128RFA1-ZU
Manufacturer Part Number
ATMEGA128RFA1-ZU
Description
IC AVR MCU 2.4GHZ XCEIVER 64QFN
Manufacturer
Atmel
Series
ATMEGAr
Datasheets
1.ATMEGA128-16AU.pdf
(385 pages)
2.ATAVR128RFA1-EK1.pdf
(13 pages)
3.ATAVR128RFA1-EK1.pdf
(555 pages)
4.ATMEGA128RFA1-ZU.pdf
(524 pages)
Specifications of ATMEGA128RFA1-ZU
Frequency
2.4GHz
Data Rate - Maximum
2Mbps
Modulation Or Protocol
802.15.4 Zigbee
Applications
General Purpose
Power - Output
3.5dBm
Sensitivity
-100dBm
Voltage - Supply
1.8 V ~ 3.6 V
Current - Receiving
12.5mA
Current - Transmitting
14.5mA
Data Interface
PCB, Surface Mount
Memory Size
128kB Flash, 4kB EEPROM, 16kB RAM
Antenna Connector
PCB, Surface Mount
Operating Temperature
-40°C ~ 85°C
Package / Case
64-VFQFN, Exposed Pad
Rf Ic Case Style
QFN
No. Of Pins
64
Supply Voltage Range
1.8V To 3.6V
Operating Temperature Range
-40°C To +85°C
Svhc
No SVHC (15-Dec-2010)
Rohs Compliant
Yes
Processor Series
ATMEGA128x
Core
AVR8
Data Bus Width
8 bit
Program Memory Type
Flash
Program Memory Size
128 KB
Data Ram Size
16 KB
Interface Type
JTAG
Maximum Clock Frequency
16 MHz
Number Of Programmable I/os
38
Number Of Timers
6
Operating Supply Voltage
1.8 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVR128RFA1-EK1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATMEGA128RFA1-ZU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Company:
Part Number:
ATMEGA128RFA1-ZUR
Manufacturer:
ON
Quantity:
56 000
- ATMEGA128-16AU PDF datasheet
- ATAVR128RFA1-EK1 PDF datasheet #2
- ATAVR128RFA1-EK1 PDF datasheet #3
- ATMEGA128RFA1-ZU PDF datasheet #4
- Current page: 302 of 385
- Download datasheet (8Mb)
Data Polling Flash
Data Polling EEPROM
302
ATmega128
3. The SPI Serial Programming instructions will not work if the communication is out of syn-
4. The Flash is programmed one page at a time. The page size is found in
5. The EEPROM array is programmed one byte at a time by supplying the address and data
6. Any memory location can be verified by using the Read instruction which returns the con-
7. At the end of the programming session, RESET can be set high to commence normal
8. Power-off sequence (if needed):
When a page is being programmed into the Flash, reading an address location within the page
being programmed will give the value $FF. At the time the device is ready for a new page, the
programmed value will read correctly. This is used to determine when the next page can be writ-
ten. Note that the entire page is written simultaneously and any address within the page can be
used for polling. Data polling of the Flash will not work for the value $FF, so when programming
this value, the user will have to wait for at least t
a chip-erased device contains $FF in all locations, programming of addresses that are meant to
contain $FF, can be skipped. See
When a new byte has been written and is being programmed into EEPROM, reading the
address location being programmed will give the value $FF. At the time the device is ready for a
new byte, the programmed value will read correctly. This is used to determine when the next
byte can be written. This will not work for the value $FF, but the user should have the following in
mind: As a chip-erased device contains $FF in all locations, programming of addresses that are
meant to contain $FF, can be skipped. This does not apply if the EEPROM is re-programmed
without chip-erasing the device. In this case, data polling cannot be used for the value $FF, and
the user will have to wait at least t
for t
WD_EEPROM
chronization. When in sync. the second byte ($53), will echo back when issuing the third
byte of the Programming Enable instruction. Whether the echo is correct or not, all FOUR
bytes of the instruction must be transmitted. If the $53 did not echo back, give RESET a
positive pulse and issue a new Programming Enable command.
page
address and data together with the Load Program Memory Page instruction. To ensure
correct loading of the page, the data low byte must be loaded before data high byte is
applied for given address. The Program Memory Page is stored by loading the Write Pro-
gram Memory Page instruction with the 9MSB of the address. If polling is not used, the
user must wait at least t
Note: If other commands than polling (read) are applied before any write operation (Flash,
EEPROM, Lock bits, Fuses) is completed, may result in incorrect programming.
together with the appropriate Write instruction. An EEPROM memory location is first
automatically erased before new data is written. If polling is not used, the user must wait
at least t
no $FFs in the data file(s) need to be programmed.
tent at the selected address at serial output MISO.
operation.
Set RESET to “1”.
Turn V
291. The memory page is loaded one byte at a time by supplying the 7 LSB of the
CC
WD_EEPROM
power off.
value.
before issuing the next byte. (See
WD_FLASH
Table 128
WD_EEPROM
before issuing the next page. (See
for t
before programming the next byte. See
WD_FLASH
WD_FLASH
Table
before programming the next page. As
value
128). In a chip erased device,
Table
128).
Table 124 on
2467V–AVR–02/11
Table 128
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