PBSS4350D,125 NXP Semiconductors, PBSS4350D,125 Datasheet - Page 2

• Manufacturer Part Number: PBSS4350D,125
• Description: TRANS NPN 50V 3A SOT457
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS4350D,125

• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 290mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 2V
• Power - Max: 750mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
FEATURES
• Low collector-emitter saturation voltage
• High current capability
• Improved device reliability due to reduced heat
• Replacement for SOT89/SOT223 standard packaged
APPLICATIONS
• Supply line switching circuits
• Battery management applications
• DC/DC convertor applications
• Strobe flash units
• Heavy duty battery powered equipment (motor and lamp
DESCRIPTION
NPN low V
package. PNP complement: PBSS5350D.
MARKING
2001 Jul 13
PBSS4350D
generation
transistors due to enhanced performance.
drivers).
50 V low V
TYPE NUMBER
CEsat
transistor in a SOT457 (SC-74) plastic
CEsat
NPN transistor
MARKING CODE
43
2
QUICK REFERENCE DATA
PINNING
V
I
R
handbook, halfpage
SYMBOL
CM
CEO
CEsat
Fig.1
PIN
1
2
3
4
5
6
Simplified outline (SOT457; SC-74) and
symbol.
Top view
collector-emitter voltage
peak collector current
equivalent on-resistance
collector
collector
base
emitter
collector
collector
6
1
PARAMETER
5
2
DESCRIPTION
4
3
MAM436
PBSS4350D
3
Product data sheet
1, 2, 5, 6
50
5
<145
4
MAX.
V
A
mΩ
UNIT