PBSS4350D,125 NXP Semiconductors, PBSS4350D,125 Datasheet - Page 4

• Manufacturer Part Number: PBSS4350D,125
• Description: TRANS NPN 50V 3A SOT457
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS4350D,125

• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 290mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 2V
• Power - Max: 750mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2001 Jul 13
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BEsat
BEon
50 V low V
CEsat
c
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector -emitter saturation
voltage
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
CEsat
PARAMETER
NPN transistor
V
V
V
V
V
V
I
I
I
I
I
V
I
V
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CB
= 500 mA; I
= 1 A; I
= 2 A; I
= 2 A; I
= 2 A; I
= 100 mA; V
= 5 V; I
= 50 V; I
= 50 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
B
B
B
B
= 50 mA
= 200 mA; note 1
= 200 mA; note 1
= 200 mA; note 1
CONDITIONS
C
C
C
C
C
4
E
E
E
= 0
= 500 mA
= 1 A; note 1
= 2 A; note 1
= 1 A; note 1
B
= 0
= 0; T
= I
CE
= 50 mA
e
= 5 V; f = 100 MHz 100
= 0; f = 1 MHz
j
= 150 °C
−
−
−
200
200
100
−
−
−
−
−
−
−
MIN.
−
−
−
−
−
−
−
−
−
110
−
−
−
−
TYP.
PBSS4350D
Product data sheet
100
50
100
−
−
−
90
170
290
<145
1.2
1.1
−
30
MAX.
nA
μA
nA
mV
mV
mV
mΩ
V
V
MHz
pF
UNIT