ATSAM3N4AA-MU Atmel, ATSAM3N4AA-MU Datasheet - Page 25

MCU FLASH 48-QFN

ATSAM3N4AA-MU

Manufacturer Part Number
ATSAM3N4AA-MU
Description
MCU FLASH 48-QFN
Manufacturer
Atmel
Series
SAM3Nr
Datasheet

Specifications of ATSAM3N4AA-MU

Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
48MHz
Connectivity
I²C, IrDA, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, DMA, POR, PWM, WDT
Number Of I /o
34
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
1.62 V ~ 3.6 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Processor Series
SAM3N
Core
ARM Cortex M3
Data Bus Width
10 bit
Interface Type
SPI, UART
Maximum Clock Frequency
48 MHz
Number Of Programmable I/os
79
Operating Supply Voltage
1.62 V to 3.6 V
Mounting Style
SMD/SMT
Operating Temperature Range
- 40 C to + 85 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details
6.3
6.4
6.5
11011AS–ATARM–04-Oct-10
Test Pin
NRST Pin
ERASE Pin
The TST pin is used for JTAG Boundary Scan Manufacturing Test or Fast Flash programming
mode of the SAM3N series. The TST pin integrates a permanent pull-down resistor of about 15
kΩ to GND, so that it can be left unconnected for normal operations. To enter fast programming
mode, see the Fast Flash Programming Interface (FFPI) section. For more on the manufacturing
and test mode, refer to the “Debug and Test” section of the product datasheet.
The NRST pin is bidirectional. It is handled by the on-chip reset controller and can be driven low
to provide a reset signal to the external components or asserted low externally to reset the
microcontroller. It will reset the Core and the peripherals except the Backup region (RTC, RTT
and Supply Controller). There is no constraint on the length of the reset pulse and the reset con-
troller can guarantee a minimum pulse length. The NRST pin integrates a permanent pull-up
resistor to VDDIO of about 100 kΩ . By default, the NRST pin is configured as an input.
The ERASE pin is used to reinitialize the Flash content (and some of its NVM bits) to an erased
state (all bits read as logic level 1). It integrates a pull-down resistor of about 100 kΩ to GND, so
that it can be left unconnected for normal operations.
This pin is debounced by SCLK to improve the glitch tolerance. When the ERASE pin is tied high
during less than 100 ms, it is not taken into account. The pin must be tied high during more than
220 ms to perform a Flash erase operation.
The ERASE pin is a system I/O pin and can be used as a standard I/O. At startup, the ERASE
pin is not configured as a PIO pin. If the ERASE pin is used as a standard I/O, startup level of
this pin must be low to prevent unwanted erasing. Please refer to
nals Multiplexing on I/O Lines” on page
output, asserting the pin to low does not erase the Flash.
41. Also, if the ERASE pin is used as a standard I/O
SAM3N Summary
Section 10.2 “Peripheral Sig-
25

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