MC9S08JE64CLH Freescale Semiconductor, MC9S08JE64CLH Datasheet - Page 38

• Manufacturer Part Number: MC9S08JE64CLH
• Description: IC MCU 8BIT 64K FLASH 64LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08JE64CLH

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 48MHz
• Connectivity: I²C, SCI, SPI, USB
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 33
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 12K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 6x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-LQFP
• Processor Series: S08JE
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 12 KB
• Maximum Clock Frequency: 48 MHz
• Operating Supply Voltage: - 0.3 V to + 3.8 V
• Maximum Operating Temperature: + 105 C
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: TWR-SER, TWR-ELEV, TWR-MCF51JE-KIT, TWR-S08JE128-KIT, TWR-LCD
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12 bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

1
2
3
4
Preliminary Electrical Characteristics
2.13
This section provides details about program/erase times and program-erase endurance for the Flash memory.
Program and erase operations do not require any special power sources other than the normal V
information about program/erase operations, see the Memory chapter in the Reference Manual for this device
(MC9S08JE128RM).
38
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to
25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer to
Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
10
#
1
2
3
4
5
6
7
8
9
Supply voltage for program/erase
-40°C to 105°C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
T
T = 25°C
L
Flash Specifications
to T
H
= –40°C to + 105°C
4
Characteristic
2
2
1
3
2
2
Preliminary — Subject to Change
Table 22. Flash Characteristics
V
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
Burst
Mass
D_ret
Page
Fcyc
Read
prog
10,000
Min
150
1.8
1.8
15
—
5
100,000
Typical
20,000
4000
100
—
—
—
—
—
9
4
DD
Max
6.67
200
3.6
3.6
—
—
—
supply. For more detailed
Freescale Semiconductor
cycles
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
C
D
D
D
D
C
C
P
P
P
P