PK60N512VMD100 Freescale Semiconductor, PK60N512VMD100 Datasheet - Page 19

• Manufacturer Part Number: PK60N512VMD100
• Description: IC ARM CORTEX MCU 512K 144-MAP
• Manufacturer: Freescale Semiconductor
• Series: Kinetisr

Specifications of PK60N512VMD100

• Core Processor: ARM Cortex-M4
• Core Size: 32-Bit
• Speed: 100MHz
• Connectivity: CAN, EBI/EMI, Ethernet, I²C, IrDA, SDHC, SPI, UART/USART, USB, USB OTG
• Peripherals: DMA, I²S, LVD, POR, PWM, WDT
• Number Of I /o: 100
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 128K x 8
• Voltage - Supply (vcc/vdd): 1.71 V ~ 3.6 V
• Data Converters: A/D 33x16b, D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 144-LBGA
• Processor Series: Kinetis
• Core: ARM Cortex M4
• Data Ram Size: 128 KB
• Interface Type: UART, SPI, I2C, I2S, CAN
• Maximum Clock Frequency: 100 MHz
• Number Of Programmable I/os: 100
• Operating Supply Voltage: 1.71 V to 3.6 V
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

5.1.6 EMC radiated emissions operating behaviors
1. Determined according to IEC Standard 61967-1, Integrated Circuits - Measurement of Electromagnetic Emissions, 150
2. V
3. Specified according to Annex D of IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and Wideband
5.1.7 Designing with radiated emissions in mind
To find application notes that provide guidance on designing your system to minimize
interference from radiated emissions:
5.1.8 Capacitance attributes
5.2 Switching specifications
Freescale Semiconductor, Inc.
V
1. Go to http://www.freescale.com.
2. Perform a keyword search for “EMC design.”
RE_IEC_SAE
Symbol
kHz to 1 GHz Part 1: General Conditions and Definitions, IEC Standard 61967-2, Integrated Circuits - Measurement of
Electromagnetic Emissions, 150 kHz to 1 GHz Part 2: Measurement of Radiated Emissions—TEM Cell and Wideband
TEM Cell Method, and SAE Standard J1752-3, Measurement of Radiated Emissions from Integrated Circuits—TEM/
Wideband TEM (GTEM) Cell Method.
TEM Cell Method, and Appendix D of SAE Standard J1752-3, Measurement of Radiated Emissions from Integrated
Circuits—TEM/Wideband TEM (GTEM) Cell Method.
Symbol
V
V
V
V
C
C
DD
RE1
RE2
RE3
RE4
IN_A
IN_D
= 3 V, T
Radiated emissions voltage, band 1
Radiated emissions voltage, band 2
Radiated emissions voltage, band 3
Radiated emissions voltage, band 4
IEC and SAE level
Description
A
Input capacitance: analog pins
Input capacitance: digital pins
Description
= 25 °C, f
Table 7. EMC radiated emissions operating behaviors
OSC
K60 Sub-Family Data Sheet Data Sheet, Rev. 4, 3/2011.
= 12 MHz (crystal), f
Table 8. Capacitance attributes
SYS
= 96 MHz
Preliminary
band (MHz)
Frequency
0.15–1000
500–1000
150–500
0.15–50
50–150
Min.
—
—
TBD
TBD
TBD
TBD
TBD
Typ.
Max.
7
7
dBμV
Unit
—
Notes
Unit
pF
pF
1,
2,
General
2
3
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